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PDF ZXMD63P02X Data sheet ( Hoja de datos )
| Número de pieza | ZXMD63P02X | |
| Descripción | DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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ZXMD63P02X
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-20V; RDS(ON)=0.27⍀; ID=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXMD63P02XTA
7 12mm embossed 1000 units
ZXMD63P02XTC
13 12mm embossed 4000 units
DEVICE MARKING
• ZXM63P02
MSOP8
Top View
PROVISIONAL ISSUE A - JUNE 1999
41
1 page  
10
5V
+25 C 4.5V
4V
1
ZXMD63P02X
TYPICAL CHARACTERISTICS
3.5V
3V
2.5V
-VGS
2V
10
+150°C
5V
4.5V
4V
1
3.5V
3V
2.5V
-VGS
2V
0.1
0.1
1 10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
10
VDS=-10V
T=150 C
1 T=25 C
0.1
1 1.5 2 2.5 3 3.5 4 4.5
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
10
1
VGS=-3V
VGS=-5V
0.1
0.1 1 10
-ID - Drain Current (A)
On-Resistance v Drain Current
0.1
0.1
1 10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
1.6
1.4 RDS(on)
VGS=-4.5V
ID=-1.2A
1.2
1.0
VGS=VDS
0.8 ID=-250uA
VGS(th)
0.6
0.4
-100 -50 0 50 100 150
Tj - Junction Temperature (°C)
200
Normalised RDS(on) and VGS(th)
v Temperature
10
1
T=150°C
0.1 T=25°C
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JUNE 1999
45
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXMD63P02X.PDF ] | |
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