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PDF ZXMD63N03X Datasheet ( Hoja de datos )

Número de pieza ZXMD63N03X
Descripción DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo

Total 7 Páginas
		
ZXMD63N03X Hoja de datos, Descripción, Manual
ZXMD63N03X
DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=30V; RDS(ON)=0.135; ID=2.3A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXMD63N03XTA
7 12mm embossed 1000 units
ZXMD63N03XTC
13 12mm embossed 4000 units
DEVICE MARKING
ZXM63N03
MSOP8
Top View
PROVISIONAL ISSUE A - JULY 1999
33

1 page

ZXMD63N03X pdf
100
+25°C
10
1
TYPICAL CHARACTERISTICS
10V 8V 7V 6V 5V
VGS
4.5V
4V
3.5V
3V
100
+150°C
10
1
ZXMD63N03X
10V 8V 7V 6V
VGS
5V
4.5V
4V
3.5V
3V
0.1
0.1
1 10
VDS - Drain-Source Voltage (V)
Output Characteristics
100
0.1
0.1
1 10
VDS - Drain-Source Voltage (V)
Output Characteristics
100
100
VDS=10V
10
T=150°C
1 T=25°C
0.1
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
10
1
VGS=3V
VGS=4.5V
0.1
VGS=10V
0.01
0.1
1
10 100
ID - Drain Current (A)
On-Resistance v Drain Current
1.8
1.6
RDS(on)
1.4
VGS=10V
ID=1.7A
1.2
1.0
VGS=VDS
0.8 ID=250uA
VGS(th)
0.6
0.4
-100 -50 0 50 100 150
Tj - Junction Temperature (°C)
200
Normalised RDS(on) and VGS(th)
v Temperature
100
10
1
T=150 C
T=25 C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 1999
37

5 Page



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