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PDF ZXMD63C02X Datasheet ( Hoja de datos )

Número de pieza ZXMD63C02X
Descripción 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo

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ZXMD63C02X Hoja de datos, Descripción, Manual
ZXMD63C02X
20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
N-CHANNEL: V(BR)DSS=20V; RDS(ON)=0.13; ID=2.4A
P-CHANNEL: V(BR)DSS=-20V; RDS(ON)=0.27; ID=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
N-CHANNEL
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXMD63C02XTA
7 12mm embossed 1000 units
ZXMD63C02XTC
13 12mm embossed 4000 units
DEVICE MARKING
ZXM63C02
MSOP8
P-CHANNEL
Top View
PROVISIONAL ISSUE A - JUNE 1999
1

1 page

ZXMD63C02X pdf
ZXMD63C02X
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
V(BR)DSS 20
IDSS
IGSS
VGS(th) 0.7
RDS(on)
gfs 2.6
V ID=250µA, VGS=0V
1 µA VDS=20V, VGS=0V
100 nA VGS=± 12V, VDS=0V
V ID=250µA, VDS= VGS
0.130
0.150
VGS=4.5V, ID=1.7A
VGS=2.7V, ID=0.85A
S VDS=10V,ID=0.85A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Ciss
Coss
Crss
350 pF
VDS=15 V, VGS=0V,
120 pF f=1MHz
50 pF
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
3.4
8.1
13.5
9.1
6
0.65
2.5
ns
ns VDD =10V, ID=1.7A
ns
RG=6.0, RD=5.7
(Refer to test
ns circuit)
nC
V D S= 16 V , V GS= 4 . 5V ,
nC ID=1.7A
(Refer to test
nC circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
0.95
Reverse Recovery Time (3) trr 15.0
Reverse Recovery Charge(3)
Qrr
5.9
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
V Tj=25°C, IS=1.7A,
V G S= 0V
ns Tj=25°C, IF=1.7A,
di/dt= 100A/µs
nC
PROVISIONAL ISSUE A - JUNE 1999
5

5 Page

ZXMD63C02X arduino
ZXMD63C02X
PACKAGE DIMENSIONS
D
8765
1 234
eX6
BC
L
Conforms to JEDEC MO-187 Iss A
PAD LAYOUT DETAILS
DIM
Millimetres
Inches
MIN MAX MIN
MAX
A
1.10
0.043
A1 0.05 0.15 0.002 0.006
B 0.25 0.40 0.010 0.016
C 0.13 0.23 0.005 0.009
θ° D
e
2.90
0.65
3.10
BSC
0.114 0.122
0.0256 BSC
E 2.90 3.10 0.114 0.122
H 4.90 BSC 0.193 BSC
L 0.40 0.70 0.016 0.028
q° 0° 6° 0°
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
©Zetex plc 1999
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JUNE 1999
12

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