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PDF ZXMC3A18DN8 Datasheet ( Hoja de datos )

Número de pieza ZXMC3A18DN8
Descripción COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo

Total 8 Páginas
		
ZXMC3A18DN8 Hoja de datos, Descripción, Manual
ADVANCE INFORMATION
ZXMC3A18DN8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A
P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
Motor Drive
LCD backlighting
Q1 = N-channel
SO8
Q2 = P-channel
ORDERING INFORMATION
DEVICE
REEL TAPE QUANTITY
SIZE WIDTH PER REEL
ZXMC3A18DN8TA
7” 12mm 500 units
ZXMC3A18DN8TC 13” 12mm 2500 units
DEVICE MARKING
ZXMC
3A18
DRAFT ISSUE C - JUNE 2003
1
Top View
SEMICONDUCTORS

1 page

ZXMC3A18DN8 pdf
ADVANCE INFORMATION
ZXMC3A18DN8
TYPICAL CHARACTERISTICS
DRAFT ISSUE C - JUNE 2003
5
SEMICONDUCTORS

5 Page



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Número de piezaDescripciónFabricantes
ZXMC3A18DN8COMPLEMENTARY 30V ENHANCEMENT MODE MOSFETZetex Semiconductors
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