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PDF ZXM62N02E6 Data sheet ( Hoja de datos )
| Número de pieza | ZXM62N02E6 | |
| Descripción | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZXM62N02E6 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM62N02E6
SUMMARY
V(BR)DSS=20V; RDS(ON)= 0.1⍀; ID=3.2A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
•www.DataSheet4U.com Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM62N02E6TA
7
8mm embossed
3000 units
ZXM62N02E6TC
13
8mm embossed
10000 units
DEVICE MARKING
• 2N02
SOT23-6
Top View
ISSUE 1 - JUNE 2004
1
1 page  
ZXM62N02E6
100
+25 C
10
1
TYPICAL CHARACTERISTICS
5V 4.5V 4V 3.5V
VGS
3V
2.5V
2V
100
+150 C
10
1
5V 4.5V 4V
VGS
3.5V
3V
2.5V
2V
1.5V
0.1
0.1
1 10
VDS - Drain-Source Voltage (V)
Output Characteristics
100
0.1
0.1
1 10
VDS - Drain-Source Voltage (V)
Output Characteristics
100
100
VDS=10V
10
T=150°C
T=25°C
1
0.1
1 1.5 2 2.5 3 3.5 4
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
10
1
VGS=3V
0.1 VGS=5V
0.01
0.1 1 10 100
ID - Drain Current (A)
On-Resistance v Drain Current
1.8
1.6
RDS(on)
VGS=4.5V
1.4 ID=2.2A
1.2
1.0
VGS=VDS
0.8 ID=250uA
VGS(th)
0.6
0.4
-100 -50 0 50 100 150 200
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
100
10
1
T=150°C
T=25°C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
ISSUE 1 - JUNE 2004
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXM62N02E6.PDF ] | |
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