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PDF ZXM61P03F Data sheet ( Hoja de datos )
| Número de pieza | ZXM61P03F | |
| Descripción | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P03F
SUMMARY
V(BR)DSS=-30V; RDS(ON)=0.35⍀; ID=-1.0A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM61P03FTA
7
8mm embossed
3000 units
ZXM61P03FTC
13
8mm embossed
10000 units
DEVICE MARKING
• P03
SOT23
Top View
PROVISIONAL ISSUE A - JULY 1999
81
1 page  
ZXM61P03F
10
+25°C
1
TYPICAL CHARACTERISTICS
9V 8V 7V 6V
10V 5V
-VGS
4V
3V
10
+150°C
1
9V 8V 7V 6V
10V
-VGS
5V
4V
3V
100m
0.1
1 10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
10
T=+150°C
1 T=+25°C
100m
VDS=-10V
10m
1.5 2.5 3.5 4.5
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
10
Vg=-3V
1
Vg=-5V
Vg=-10V
100m
0.1 1 10
-ID - Drain Current (A)
On-Resistance v Drain Current
100m
0.1
10
-VDS - Drain-Source Voltage (V)
Output Characteristics
100
1.7
RDS(on)
1.5
VGS=-10V
ID=-0.6A
1.3
1.1
0.9 VGS=VDS
ID=-250uA
0.7 VGS(th)
0.5
-100
0
+100
+200
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
10
1
100m
T=+150°C
T=+25°C
10m
0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - JULY 1999
85
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXM61P03F.PDF ] | |
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