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PDF ZXM61N02 Data sheet ( Hoja de datos )
| Número de pieza | ZXM61N02 | |
| Descripción | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZXM61N02 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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20V N-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61N02F
SUMMARY
V(BR)DSS=20V; RDS(ON)=0.18⍀; ID=1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE TAPE WIDTH (mm) QUANTITY
(inches)
PER REEL
ZXM61N02FTA
7
8mm embossed
3000 units
ZXM61N02FTC
13
8mm embossed
10000 units
DEVICE MARKING
• N02
SOT23
Top View
PROVISIONAL ISSUE A - MAY 1999
57
1 page  
ZXM61N02F
TYPICAL CHARACTERISTICS
100 +25°C
10
1
VGS
6V
4V
3V
2.5V
2V
100m
1.5V
10m
0.1
1
VDS - Drain-Source Voltage (V)
Output Characteristics
10
100 +150°C
10
1
100m
VGS
6V
4V
3.5V
3V
2.5V
2V
1.5V
10m
0.1
1
VDS - Drain-Source Voltage (V)
Output Characteristics
10
10 VDS=10V
1
T=150°C
T=25°C
0.1
0.01
1.5
2.5 3.5
VGS - Gate-Source Voltage (V)
Transfer Characteristics
4.5
10
1
VGS=2.7V
VGS=4.5V
0.1
0.1
1 10
ID - Drain Current (A)
100
On-Resistance v Drain Current
1.6
RDS(on)
1.4
VGS=4.5V
1.2 ID=0.93A
1.0
VGS=VDS
0.8 ID=250µA
0.6
0.4
-100
VGS(th)
0 100
TJ- Junction Temperature (°C)
200
Normalised RDS(on) and VGS(th)
v Temperature
100
10
1
100m
10m
1m
T=150°C
T=25°C
100µ
0.2
0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE A - MAY 1999
61
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ZXM61N02.PDF ] | |
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