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PDF ZVP2120G Data sheet ( Hoja de datos )
| Número de pieza | ZVP2120G | |
| Descripción | P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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SOT223 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt VDS
* RDS(on)=25Ω
7
ZVP2120G
D
PARTMARKING DETAIL ZVP2120
COMPLEMENTARY TYPE ZVN2120G
S
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS -200 V
Continuous Drain Current at Tamb=25°C
ID
-200 mA
Pulsed Drain Current
IDM -1.2 A
Gate Source Voltage
VGS ± 20 V
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS -200
V ID=-1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th) -1.5 -3.5 V
ID=-1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
IGSS
IDSS
-20
-10
-100
nA
µA
µA
VGS=± 20V, VDS=0V
VDS=-200 V, VGS=0
VDS=-160 V, VGS=0V, T=125°C
(2)
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
ID(on)
RDS(on)
-300
25
mA VDS=-25 V, VGS=-10V
Ω VGS=-10V, ID=-150mA
Forward Transconductance
(1)(2)
gfs
50
mS VDS=-25V, ID=-150mA
Input Capacitance (2)
Common Source Output
Capacitance (2)
Ciss
Coss
100 pF
25 pF
VDS=-25V, VGS=0V, f=1MHz
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
Crss
td(on)
tr
td(off)
tf
7 pF
7 ns
15 ns VDD≈-25V, ID=-150mA
12 ns
15 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 431
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