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PDF ZVN4310A Data sheet ( Hoja de datos )
| Número de pieza | ZVN4310A | |
| Descripción | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt VDS
* RDS(on) = 0.5Ω
* Spice model available
ZVN4310A
ABSOLUTE MAXIMUM RATINGS.
D
G
S
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS 100 V
Continuous Drain Current at Tamb=25°C
ID
0.9 A
Practical Continuous Drain Current at
Tamb=25°C
IDP
1A
Pulsed Drain Current
IDM 12 A
Gate Source Voltage
VGS
± 20 V
Power Dissipation at Tamb=25°C
Ptot
850 mW
Practical Power Dissipation at Tamb=25°C*
Ptotp
1.13 W
Operating and Storage Temperature Range Tj:Tstg
-55 to +150
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B.
with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
100
V ID=1mA, VGS=0V
Gate-Source
Threshold Voltage
VGS(th)
1
3 V ID=1mA, VDS= VGS
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
IGSS
IDSS
ID(on)
9
20 nA VGS=± 20V, VDS=0V
10 µA VDS=100V, VGS=0
100 µA VDS=80V, VGS=0V, T=125°C(2)
A VDS=25 V, VGS=10V
Static Drain-Source
On-State Resistance
(1)
RDS(on)
0.36 0.5 Ω
0.48 0.65 Ω
VGS=10V,ID=3A
VGS=5V, ID=1.5A
Forward
Transconductance
(1)(2)
gfs
600
mS VDS=25V,ID=3A
3-393
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