(PDF) ZVN0117TA Datasheet - N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Número de pieza	ZVN0117TA
Descripción	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Fabricantes	ETC
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No Preview Available ! N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets ZVN0117TA DG S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE 170 160 2 ± 20 700 -55 to +150 UNIT V mA A V mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown Voltage BVDSS 170 V ID=10µA, VGS=0V Gate-Body Leakage Zero Gate Voltage Drain Current IGSS IDSS 100 nA VGS=± 15V, VDS=0V 10 µA VDS=170 V, VGS=0 50 µA VDS=140 V, VGS=0V, T=50°C(2) On-State Drain Current(1) Static Drain-Source On-State Resistance (1) ID(on) RDS(on) 100 23 23 mA VDS=3V, VGS=3.3V Ω VGS=3.3V,ID=100mA Ω VGS=3V,ID=30mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% PAGE NO 1 page

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PDF ZVN0117TA Data sheet ( Hoja de datos )