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PDF ZTX855 Data sheet ( Hoja de datos )
| Número de pieza | ZTX855 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX855 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94
FEATURES
* 150 Volt VCEO
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
* Ptot= 1.2 Watt
ZTX855
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
250 V
Collector-Emitter Voltage
VCEO
150 V
Emitter-Base Voltage
VEBO
6V
Peak Pulse Current
ICM 10 A
Continuous Collector Current IC 4 A
Practical Power Dissipation*
Ptotp
1.58 W
Power Dissipation at Tamb=25°C Ptot 1.2 W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 250 375
V IC=100µA
Collector-Emitter Breakdown V(BR)CER 250 375
Voltag
V IC=1µA, RB ≤1KΩ
Collector-Emitter Breakdown V(BR)CEO 150 180
Voltage
V IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
6
8
V IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
ICBO
ICER
R ≤1KΩ
IEBO
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
50 nA VCB=200V
1 µA VCB=200V, Tamb=100°C
50 nA VCB=200V
1 µA VCB=200V, Tamb=100°C
10 nA VEB=6V
20 40 mV IC=100mA, IB=5mA*
35 60 mV IC=500mA, IB=50mA*
60 100 mV IC=1A, IB=100mA*
210 260 mV IC=4A, IB=400mA*
960 1100 mV IC=4A, IB=400mA*
2-300
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZTX855.PDF ] | |
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