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PDF ZTX541 Data sheet ( Hoja de datos )
| Número de pieza | ZTX541 | |
| Descripción | PNP SILICON PLANAR SMALL SIGNAL TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX541 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 MARCH 94
ZTX541
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
-100
-100
-5
-100
300
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -100
V IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -100
V IC=-10µA
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V IE=-100µA
Collector Cut-Off
Current
ICBO
-0.5 µA
VCB=-80V
Emitter Cut-Off Current ICER
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5 µA
-10 µA
-0.5 V
VCE=-80V, RBE=50KΩ
VCE=-80V, RBE=50KΩ
IC=-2mA, IB=-0.1mA
Base-Emitter
Saturation Voltage
VBE(sat)
-1.0 V
IC=-2mA, IB=-0.1mA
Static Forward Current hFE
Transfer Ratio
30
IC=-2mA, VCE=-1V
Transition Frequency fT
80
MHz IC=-5mA, VCE=-5V
f=60MHz
Output Capacitance
Cobo
10 pF VCB=-6V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-189
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZTX541.PDF ] | |
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