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PDF ZTX458 Data sheet ( Hoja de datos )
| Número de pieza | ZTX458 | |
| Descripción | NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZTX458 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 400 Volt VCEO
* 0.5 Amp continuous current
* Ptot= 1 Watt
ZTX458
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 400
Collector-Emitter
Breakdown Voltage
VCEO(sus) 400
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
Collector Cut-Off
Current
ICBO
100
Collector Cut-Off
Current
ICES
100
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
100
0.2
0.5
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
Base-Emitter
Turn On Voltage
VBE(on)
0.9
Static Forward Current hFE
Transfer Ratio
100
100
15
300
Transition Frequency fT
50
Collector-Base
Breakdown Voltage
Cobo
5
C
B
E
E-Line
TO92 Compatible
VALUE
400
400
5
300
1
-55 to +200
UNIT
V
V
V
mA
W
°C
UNIT
V
CONDITIONS.
IC=100µA
V IC=10mA*
V IE=100µA
nA VCB=320V
nA VCE=320V
nA
V
V
V
V
MHz
pF
VEB=4V
IC=20mA, IB=2mA
IC=50mA, IB=6mA
IC=50mA, IB=5mA
IC=50mA, VCE=10V
IC=1mA, VCE=10V
IC=50mA, VCE=10V
IC=100mA, VCE=10V*
IC=10mA, VCE=20V
f=20MHz
VCB=20V, f=1MHz
3-182
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZTX458.PDF ] | |
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