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PDF ZTX415 Data sheet ( Hoja de datos )
| Número de pieza | ZTX415 | |
| Descripción | NPN SILICON PLANAR AVALANCHE TRANSISTOR | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ZTX415
ISSUE 4 - NOVEMBER 1995
FEATURES
* Specifically designed for Avalanche mode operation
* 60A Peak Avalanche Current (Pulse width=20ns)
* Low inductance package
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
* Suitable for single, series and parallel operation
ABSOLUTE MAXIMUM RATINGS.
C
B
E
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
260 V
Collector-Emitter Voltage
VCEO
100 V
Emitter-Base Voltage
VEBO
6V
Continuous Collector Current
IC
500 mA
Peak Collector Current (Pulse Width=20ns) ICM
60 A
Power Dissipation
Ptot 680 mW
Operating and Storage Temperature Range Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CES 260
VCEO(sus) 100
V IC=1mA
Tamb= -55 to +175°C
V IC=100µA
Emitter-Base
Breakdown Voltage
V(BR)EBO 6
V IE=10µA
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.1 µA VCB=180V
10 µA VCB=180V, Tamb=100°C
0.1 µA VEB=4V
0.5 V
IC=10mA, IB=1mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9 V
IC=10mA, IB=1mA*
Current in Second
Breakdown (Pulsed)
ISB
Static Forward Current hFE
Transfer Ratio
15
25
25
A VC=200V, CCE=620pF
A VC=250V, CCE=620pF
IC=10mA, VCE=10V*
Transition Frequency fT
40
MHz IC=10mA, VCE=20V
f=20MHz
Collector-Base
Capacitance
Ccb
8 pF VCB=20V, IE=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-171
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet ZTX415.PDF ] | |
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