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PDF WS57C49C-55CMB Data sheet ( Hoja de datos )

Número de pieza WS57C49C-55CMB
Descripción HIGH SPEED 8K x 8 CMOS PROM/RPROM
Fabricantes STMicroelectronics 
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WS57C49C
MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM
KEY FEATURES
Ultra-Fast Access Time
— tACC = 35 ns
— tCS = 20 ns
Low Power Consumption
Fast Programming
Pin Compatible with Bipolar PROMs
Immune to Latch-UP
— Up to 200 mA
ESD Protection Exceeds 2000 V
Available in 300 and 600 Mil DIP, CLLCC,
and Flatpack
GENERAL DESCRIPTION
The WS57C49C is a High Performance 64K UV Erasable Electrically Re-Programmable Read Only Memory
(RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM
speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the
WS57C49C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the
entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which
cannot be erased, every WS57C49C in a windowed package is 100% tested with worst case test patterns both
before and after assembly.
The WS57C49C is configured in the standard Bipolar PROM pinout which provides an easy upgrade path for
systems which are currently using Bipolar PROMs, or its predecessor, the WS57C49B.
MODE SELECTION
PINS
MODE
Read
Output
Disable
Program
Program
Verify
CS1/VPP
VI L
VI H
VPP
VI L
VCC
VCC
VCC
VCC
VCC
OUTPUTS
DOUT
High Z
DIN
DOUT
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP/Flatpack
NC
A5 A6 A7 VCC A8 A9
A7 1
A4
4
5
3
2
1
28 27 26
25
A10
A6 2
A5 3
A3
A2
A1
A0
NC
O0
6 24
7 23
8 22
9 21
10 20
11 19
12 13 14 15 16 17 18
CS1/VPP
A11
A12
NC
A4
A3
A2
A1
4
5
6
7
O7
O6
A0 8
O0 9
O1 10
O2 11
O1 O2 NC O3 O4 O5
GND
GND 12
24 VCC
23 A8
22 A9
21 A10
20 CS1/VPP
19 A11
18 A12
17 O7
16 O6
15 O5
14 O4
13 O3
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
WS57C49C-35
35 ns
20 ns
WS57C49C-45
45 ns
25 ns
WS57C49C-55
55 ns
25 ns
WS57C49C-70
70 ns
25 ns
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