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Número de pieza | W986432DH | |
Descripción | 512K 4 BANKS 32 BITS SDRAM | |
Fabricantes | Winbond | |
Logotipo | ||
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No Preview Available ! PRELIMINARY W986432DH
512K × 4 BANKS × 32 BITS SDRAM
GENERAL DESCRIPTION
W986432DH is a high-speed synchronous dynamic random access memory (SDRAM), organized as
512K words × 4 banks × 32 bits. Using pipelined architecture and 0.175 µm process technology,
W986432DH delivers a data bandwidth of up to 800M bytes per second (5). For different application,
W986432DH is sorted into four speed grades: -5, -55, -6, -7,-8.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W986432DH is ideal for main memory in
high performance applications.
FEATURES
• 3.3V ±0.3V power supply
• 524288 words × 4 banks × 32 bits organization
• Auto Refresh and Self Refresh
• CAS latency: 2 and 3
• Burst Length: 1, 2, 4, 8, and full page
• Sequential and Interleave burst
• Burst read, single write operation
• Byte data controlled by DQM
• Power-down Mode
• Auto-precharge and controlled precharge
• 4K refresh cycles/64 mS
• Interface: LVTTL
• Packaged in 86-pin TSOP II, 400 mil - 0.50
Publication Release Date: May 2000
- 1 - Revision A0
1 page W986432DH
DC CHARACTERISTICS
Absolute Maximum Rating
PARAMETER
Input, Column Output Voltage
Power Supply Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (10s)
Power Dissipation
Short Circuit Output Current
SYM.
VIN, VOUT
VCC, VCCQ
TOPR
TSTG
TSOLDER
PD
IOUT
RATING
-0.3 − VCC +0.3
-0.3 − 4.6
0 − 70
-55 − 150
260
1
50
UNIT
V
V
°C
°C
°C
W
mA
NOTES
1
1
1
1
1
1
1
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.
RECOMMENDED DC OPERATING CONDITIONS
(TA = 0 to 70°C)
PARAMETER
SYM. MIN. TYP.
Power Supply Voltage
VCC
Power Supply Voltage (for I/O
Buffer)
VCCQ
Input High Voltage
VIH
Input Low Voltage
VIL
Note: VIH (max.) = VCC/VCCQ+1.2V for pulse width < 5 nS
VIL (min.) = VSS/VSSQ-1.2V for pulse width < 5 nS
3.0
3.0
2.0
-0.3
3.3
3.3
-
-
MAX.
3.6
3.6
UNIT
V
V
NOTE
S
2
2
VCC +0.3
0.8
V
V
2
2
CAPACITANCE
(VDD = 3.3V, TA = 25 °C, f = 1 MHz)
PARAMETER
Input Capacitance
(A0 to A11, BS0, BS1, CS , RAS , CAS , WE , DQM, CKE)
Input Capacitance (CLK)
Input/Output capacitance (DQ0−DQ31)
Note: These parameters are periodically sampled and not 100% tested
SYM.
Ci
MIN.
2.5
MAX. UNIT
4 pf
CCLK
Co
2.5
4
4
6.5
pf
pf
Publication Release Date: May 2000
- 5 - Revision A0
5 Page This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet W986432DH.PDF ] |
Número de pieza | Descripción | Fabricantes |
W986432DH | 512K 4 BANKS 32 BITS SDRAM | Winbond |
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