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PDF VTP8651 Data sheet ( Hoja de datos )
| Número de pieza | VTP8651 | |
| Descripción | VTP Process Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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VTP Process Photodiodes
VTP8651
PACKAGE DIMENSIONS inch (mm)
CASE 22 MINI-DIP
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic,
infrared transmitting package. Suitable for direct
mounting to P.C.B. Arrays can be formed by
positioning devices side by side. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
CJ
Re
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
@ Peak
VTP8651
Min. Typ. Max.
35 55
.24
300
-2.0
30
.15
50
.045
.50
725 1150
925
33 140
±50
2.0 x 10-13 (Typ.)
1.4 x 10 12 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm2)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
64
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