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PDF VTP1112 Data sheet ( Hoja de datos )
| Número de pieza | VTP1112 | |
| Descripción | VTP Process Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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VTP Process Photodiodes
VTP1112
PACKAGE DIMENSIONS inch (mm)
CASE 19 TO-46 LENSED HERMETIC
CHIP ACTIVE AREA: .0025 in2 (1.6 mm2)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a
lensed. dual lead TO-46 package. Cathode is
common to the case. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
CJ
Re
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
Junction Capacitance
Responsivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 15 V
940 nm
@ Peak
VTP1112
Min. Typ. Max.
30 90
.20
350
-2.0
7
.5
6
.033
.55
400 1150
925
50 140
±15
8.7 x 10-14 (Typ.)
1.5 x 10 12 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
nA
GΩ
pF
A/(W/cm2)
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
50
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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