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PDF VTE1285 Data sheet ( Hoja de datos )
| Número de pieza | VTE1285 | |
| Descripción | GaAlAs Infrared Emitting Diodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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GaAlAs Infrared Emitting Diodes
T-1¾ (5 mm) Bullet Package — 880 nm
VTE1285
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 62 T-1¾ (5 mm) BULLET
CHIP SIZE: .015" x .015"
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
Maximum Reverse Voltage:
Maximum Reverse Current @ VR = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ IF = 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
5.0V
10 µA
880 nm
23 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Part Number
VTE1285
Output
Irradiance
Ee
mW/cm2
Min. Typ.
3.0 5.5
Condition
distance Diameter
mm mm
36 6.4
Radiant
Intensity
Total Power
Test
Current
Ie
mW/sr
Min.
39
PO IFT
mW mA
Typ. (Pulsed)
20 100
Forward Drop
VF
@ IFT
Volts
Typ. Max.
1.5 2.0
Half Power Beam
Angle
θ1/2
Typ.
±8°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
117
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| PDF Descargar | [ Datasheet VTE1285.PDF ] | |
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