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PDF VTB5051UVJ Data sheet ( Hoja de datos )
| Número de pieza | VTB5051UVJ | |
| Descripción | VTB Process Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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VTB Process Photodiodes
VTB5051UVJ
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 14A TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in2 (14.8 mm2)
Planar silicon photodiode in a three lead TO-5
package with a UV transmitting “flat” window.
Chip is isolated from the case. The third lead
allows case to be grounded. These diodes have
very high shunt resistance and have good blue
response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
TC RSH
CJ
SR
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
RSH Temperature Coefficient
Junction Capacitance
Sensitivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = -10 mV
H = 0, V = -10 mV
H = 0, V = 0
365 nm
220 nm
VTB5051UVJ
Min. Typ. Max.
85 130
.12 .23
490
-2.0
250
.56
-8.0
3.0
0.1
.038
200 1100
920
2 40
±50
2.1 x 10-14 (Typ.)
1.8 x 10 13 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
A/W
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
33
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