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PDF UPD16877 Data sheet ( Hoja de datos )

Número de pieza UPD16877
Descripción MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT
Fabricantes NEC 
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No Preview Available ! UPD16877 Hoja de datos, Descripción, Manual

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16877
MONOLITHIC QUAD H-BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16877 is monolithic quad H-bridge driver LSI which uses power MOSFETs in the output stages. By using
the MOS process, this driver IC has substantially improved saturation voltage and power consumption as compared
with conventional driver circuits using bipolar transistors.
By eliminating the charge pump circuit, the current during power-OFF is drastically decreased.
In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning
when the supply voltage drops.
As the package, a 24-pin plastic TSSOP is adopted to enable the creation of compact, slim application sets.
This driver IC can drive two stepping motor at the same time, and is ideal for driving stepping motors in the lens of
a camcorder.
FEATURES
Four H bridge circuits employing power MOSFETs
Low current consumption by eliminating charge pump
VM pin current when power-OFF: 10 µA MAX. VDD pin current: 10 µA MAX.
Input logic frequency: 100 kHz
3-V power supply
Minimum operating supply voltage: 2.5 V
Low voltage malfunction prevention circuit
24-pin plastic TSSOP (5.72 mm (225))
ORDERING INFORMATION
Part Number
µPD16877MA-6A5
Package
24-pin plastic TSSOP (5.72 mm (225))
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. S13964EJ1V0DS00 (1st edition)
Date Published March 2000 N CP(K)
Printed in Japan
©
2000

1 page




UPD16877 pdf
BLOCK DIAGRAM
IN1
9
EN1
10
Control
circuit (1)
IN2
11
EN2
12
Control
circuit (2)
IN3
13
EN3
14
Control
circuit (3)
IN4
15
EN4
16
Control
circuit (4)
µPD16877
Low volatge
malfunction
prevention
circuit
24
VDD
H-bridge
(1)
VM1
1
OUT1A
2
OUT1B
23
PGND
3
H-bridge
(2)
VM23
20
OUT2A
4
OUT2B
21
PGND
22
H-bridge
(3)
OUT3A
5
OUT3B
19
PGND
6
VM4
8
H-bridge
(4)
OUT4A
7
OUT4B
17
PGND
18
Remark Plural terminal (VM, PGND) is not only 1 terminal and connect all terminals.
Data Sheet S13964EJ1V0DS00
5

5 Page





UPD16877 arduino
µPD16877
NOTES FOR CMOS DEVICES
1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS
Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.
2 HANDLING OF UNUSED INPUT PINS FOR CMOS
Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused
pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.
3 STATUS BEFORE INITIALIZATION OF MOS DEVICES
Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.
Data Sheet S13964EJ1V0DS00
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