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PDF UPD16510 Data sheet ( Hoja de datos )

Número de pieza UPD16510
Descripción VERTICAL DRIVER FOR CCD SENSOR
Fabricantes NEC 
Logotipo NEC Logotipo



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No Preview Available ! UPD16510 Hoja de datos, Descripción, Manual

DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16510
VERTICAL DRIVER FOR CCD SENSOR
The µPD16510 is a vertical driver dedicated for CCD area image sensors that incorporates a level conversion
circuit and a three-level output function. It contains a CCD vertical register driver (4 channels) and a VOD shutter
driver (1 channel).
The µPD16510, which uses the CMOS process, provides optimum transmission delay and output ON resistance
characteristics for the vertical drive of CCD sensors. It can be used for low-voltage logic (logic power-supply voltage:
2.0 to 5.5 V).
FEATURES
• CCD vertical register driver : 4 channels, VOD shutter driver: 1 channel
• Small package
: 20-pin plastic shrink SOP (225 mil)
• High breakdown voltage : 33 V MAX.
• Low output ON resistance : 30 TYP.
• Low voltage operation (logic power-supply voltage: 2.0 to 5.5 V)
• Latch-up free
• Pin-compatible with µPD16506 (CCD driver)
APPLICATIONS
• Camcorders
ORDERING INFORMATION
Part Number
µPD16510GR-8JG
Package
20-pin plastic shrink SOP (225 mil)
The information in this document is subject to change without notice.
Document No. S12191EJ2V0DS00 (2nd edition)
(Previous No. IC-3448)
Date Published May 1997 N
Printed in Japan
The mark shows major revised points.
1994

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UPD16510 pdf
µPD16510
ELECTRICAL SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = 25 ˚C, GND = 0 V)
Parameter
Power supply voltage
Power supply voltage
Power supply voltage
Power supply voltage
Input voltage
Operating ambient temperature
Storage temperature
Power dissipation
Symbol
VCC
VDD1
VDD2
Vsb
VI
TA
Tstg
Pd
Conditions
TA = 85 °C
Rating
VSS–0.3 to VSS+20.0
VSS–0.3 to VSS+33.0
VSS–0.3 to VSS+33.0
VSS–0.3 to VSS+33.0
VSS–0.3 to VCC+0.3
–25 to +85
–40 to +125
260
Unit
V
V
V
V
V
°C
°C
mW
Caution Exposure to Absolute Maximum Rating for extended periods may affect device reliability;
exceeding the ratings could cause permanent damage. The parameters apply independently.
RECOMMENDED OPERATING CONDITIONS (TA = 25 ˚C, GND = 0 V)
Parameter
Power supply voltage
Power supply voltage
Power supply voltage
Power supply voltage
Power supply voltage
Power supply voltage
Power supply voltage
Input voltage, high
Input voltage, low
Operating ambient temperature
Symbol
VCC
VDD1
VDD1–VSS
VDD2a
VDD2b
VSS
Vsb–VSS
VIH
VIL
TA
Note
Note
Note
Conditions
MIN.
2.0
10.5
20.5
–1.0
–1.0
–10.0
TYP.
15.0
–0.8 VCC
0
–20
MAX.
5.5
21.0
31.0
+4.0
+4.0
–6.0
31.0
VCC
0.3 VCC
+70
Unit
V
V
V
V
V
V
V
V
V
°C
Note Set the values of VDD1 and VSS to conform to VDD1–VSS specification value.
5

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UPD16510 arduino
µPD16510
RECOMMENDED SOLDERING CONDITIONS
When soldering this product, it is highly recommended to observe the conditions as shown below. If other soldering
processes are used, or if the soldering is performed under different conditions, please make sure to consult with our
sales offices.
For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL”
(C10535E).
Surface mount device
µPD16510GR-8JG: 20-pin plastic shrink SOP (225 mil)
Process
Infrared ray reflow
VPS
Wave soldering
Partial heating method
Conditions
Peak temperature: 235 °C or below (Package surface temperature),
Reflow time: 30 seconds or less (at 210 °C or higher),
Maximum number of reflow processes: 3 times.
Peak temperature: 215 °C or below (Package surface temperature),
Reflow time: 40 seconds or less (at 200 °C or higher),
Maximum number of reflow processes: 3 times.
Solder temperature: 260 °C or below, Flow time: 10 seconds or less,
Maximum number of flow processes: 1 time,
Pre-heating temperature: 120 °C or below (Package surface temperature).
Pin temperature: 300 °C or below,
Heat time: 3 seconds or less (Per each side of the device).
Symbol
IR35-00-3
VP15-00-3
WS60-00-1
Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the
device will be damaged by heat stress.
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