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Número de pieza | UPC8211TK | |
Descripción | NECs SiGe LOW NOISE AMPLIFIER FOR GPS/MO BILE COMMUNICATIONS | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPC8211TK (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! NEC's SiGe
LOW NOISE AMPLIFIER FOR UPC8211TK
GPS/MOBILE COMMUNICATIONS
FEATURES
• LOW NOISE:
NF = 1.3 dB TYP.
• HIGH GAIN:
GP = 18.5 dB TYP.
• LOW CURRENT CONSUMPTION:
ICC = 3.5 mA TYP. at VCC = 3.0 V
• BUILT-IN POWER SAVE FUNCTION:
• HIGH-DENSITY SURFACE MOUNTING:
6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)
INTERNAL BLOCK DIAGRAM
Input 1
GND 2
Bias
PS 3
6 Vcc
5 GND
4 Output
APPLICATION
• Low Noise amplifier for GPS and mobile communications
• General purpose low noise amplifier
DESCRIPTION
NEC's UPC8211TK is a silicon germanium (SiGe) monolithic
integrated circuit designed as low noise amplifier for GPS and
as a general low nois amplifier for mobile communications.
The package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm)
suitable for surface mount and optimized for very densely
populated compact designs.
This IC is manufactured using NEC's 60 GHz fTUHS2 (Ultra
High Speed Process) silicon bipolar process. This process
can realize excellent low noise peformance and low power
consumption simultaneously.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
ELECTRICAL CHARACTERISTICS,
(Unless otherwise specified, TA = +25°C, VCC = 3.0 V, fin = 1575 MHz, VPS = 3.0 V)
PART NUMBER
PACKAGE OUTLINE
UPC8211TK
S06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP MAX
ICC Circuit Current (no input signal)
mA –
3.5 4.5
At power save mode (VPS < 0.8V)
GP Power Gain
μA – – 1
dB 15.5 18.5 21.5
NF Noise Figure
dB –
1.3 1.5
IIP3 3rd Order Distortion Input Intercept Point (Gain = 18.5 dB)
dBm
–
-12
–
RLIN
Input Return Loss
dB – -7.5 -6
RLOUT Output Return Loss
dB –
-14.5
-10
ISO Isolation
dBm
–
-32.5
–
VPS ON Rising Voltage from Power-Saving Mode
V 2.2
–
–
VPS OFF Falling Voltage from Power-Saving Mode
V–
– 0.8
Flat
Po(1 dB)
Gain Flatness (fin ±2.5 MHz)
Gain1 dB Compression Output Power
dB
dBm
–
–
– Δ0.5
-4 –
Po Output Power
dBm
-1.5
+2.0
–
California Eastern Laboratories
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet UPC8211TK.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPC8211TK | NECs SiGe LOW NOISE AMPLIFIER FOR GPS/MO BILE COMMUNICATIONS | NEC |
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