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PDF UPC8179TB-E3 Data sheet ( Hoja de datos )

Número de pieza UPC8179TB-E3
Descripción SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
Fabricantes NEC 
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8179TB
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC can realize low current consumption with external chip inductor which can not be realized on internal 50
wideband matched IC. This low current amplifier operates on 3.0 V.
This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Low current consumption
: ICC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage
: VCC = 2.4 to 3.3 V
• High efficiency
: PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz
PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz
PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz
• Power gain
: GP = 13.5 dB TYP. @ f = 1.0 GHz
GP = 15.5 dB TYP. @ f = 1.9 GHz
GP = 15.5 dB TYP. @ f = 2.4 GHz
• Excellent isolation
: ISL = 44 dB TYP. @ f = 1.0 GHz
ISL = 42 dB TYP. @ f = 1.9 GHz
ISL = 41 dB TYP. @ f = 2.4 GHz
• Operating frequency
: 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Light weight
: 7 mg (Standard value)
APPLICATION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14730EJ2V0DS00 (2nd edition)
Date Published August 2000 N CP(K)
Printed in Japan
©
2000

1 page




UPC8179TB-E3 pdf
µPC8179TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Circuit Current
Power Dissipation
Symbol
VCC
ICC
PD
Operating Ambient Temperature
Storage Temperature
Input Power
TA
Tstg
Pin
Conditions
TA = +25 °C, Pin 4, Pin 6
TA = +25 °C
Mounted on double sided copper clad 50 × 50 × 1.6
mm epoxy glass PWB (TA = +85 °C)
TA = +25 °C
Ratings
3.6
15
270
Unit
V
mA
mW
40 to +85
55 to +150
+5
°C
°C
dBm
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
VCC
Operating Ambient Temperature
TA
MIN.
2.4
40
TYP.
3.0
MAX.
3.3
+25 +85
Unit Remarks
V The same voltage should be applied
to pin 4 and pin 6.
°C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 , at LC matched frequency)
Parameter
Circuit Current
Power Gain
Isolation
1 dB Gain Compression Output
Power
Noise Figure
Input Return Loss
(Without matching circuit)
Symbol
ICC
GP
ISL
Po(1dB)
NF
RLin
Conditions
No signal
f = 1.0 GHz, Pin = 30 dBm
f = 1.9 GHz, Pin = 30 dBm
f = 2.4 GHz, Pin = 30 dBm
f = 1.0 GHz, Pin = 30 dBm
f = 1.9 GHz, Pin = 30 dBm
f = 2.4 GHz, Pin = 30 dBm
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz, Pin = 30 dBm
f = 1.9 GHz, Pin = 30 dBm
f = 2.4 GHz, Pin = 30 dBm
MIN.
2.9
11.0
13.0
13.0
39
37
36
0.5
2.0
3.0
4
4
6
TYP.
4.0
13.5
15.5
15.5
44
42
41
+3.0
+1.5
+1.0
5.0
5.0
5.0
7
7
9
MAX.
5.4
15.5
17.5
17.5
6.5
6.5
6.5
Unit
mA
dB
dB
dBm
dB
dB
Data Sheet P14730EJ2V0DS00
5

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UPC8179TB-E3 arduino
µPC8179TB
1.0 GHz OUTPUT PORT MATCHING
S-PARAMETER (monitored at connector on board)
TA = +25°C, VCC = Vout = 3.0 V
S11 1: 73.629 –61.461 2.5895 pF
1 000.000 000 MHz
MARKER 1
1 GHz
1
START 100.000 000 MHz
STOP 3 100.000 000 MHz
S22
MARKER 1
1 GHz
1: 50.812
20.338
3.2369 nH
1 000.000 000 MHz
1
START 100.000 000 MHz
STOP 3 100.000 000 MHz
Data Sheet P14730EJ2V0DS00
11

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