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PDF UPC8106TB Data sheet ( Hoja de datos )
| Número de pieza | UPC8106TB | |
| Descripción | SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER FOR WIRELESS TRANSCEIVER | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC8106TB, µPC8109TB
SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONES
DESCRIPTION
The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for
cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB
features low current consumption. From these two version, you can chose either IC corresponding to your system
design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your
system size.
The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process.
This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface
from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and
reliability.
FEATURES
• Recommended operating frequency : fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz
• Supply voltage
: VCC = 2.7 to 5.5 V
• High-density surface mounting
: 6-pin super minimold package
• Low current consumption
: ICC = 9 mA TYP. @ µPC8106TB
ICC = 5 mA TYP. @ µPC8109TB
• Minimized carrier leakage
: Due to double balanced mixer
• Built-in power save function
APPLICATION
• Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)
ORDERING INFORMATION
Part Number
µPC8106TB-E3
µPC8109TB-E3
Markings
C2D
C2G
Product Type
High IP3
Low current consumption
Package
6-pin super
minimold
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
QTY 3 kp/Reel.
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: µPC8106TB, µPC8109TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12770EJ2V0DS00 (2nd edition)
Date Published April 1999 N CP(K)
Printed in Japan
©
1997, 1999
1 page  
µPC8106TB, µPC8109TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Votage
PS pin Input Voltage
Power Dissipation of
Package
Symbol
VCC
VPS
PD
Operating Ambient Temperature
Storage Temperature
Maximum Input Power
TA
Tstg
Pin
Test Conditions
TA = +25 °C, Pin 5 and 6
TA = +25 °C
Mounted on double-sided copper-clad 50 × 50 ×
1.6 mm epoxy glass PWB
TA = +85 °C
Rating
6.0
6.0
200
Unit
V
V
mW
−40 to +85
−55 to +150
+10
°C
°C
dBm
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
VCC
Operating Ambient Temperature
Local Input Level
RF Output Frequency
IF Input Frequency
TA
PLOin
fRFout
fIFin
MIN.
2.7
−40
−10
0.4
100
TYP.
3.0
+25
−5
−
−
MAX.
5.5
+85
0
2.0
400
Unit
V
°C
dBm
GHz
MHz
Note
The same voltage should be supplied to
pin 5 and 6
ZS = 50 Ω (without matching)
With external matching circuit
ELECTRICAL CHARACTERISTICS
(TA = +25 °C, VCC = VRFout = 3.0 V, fIFin = 240 MHz, PLOin = −5 dBm, and VPS ≥ 2.7 V unless otherwise
specified)
Parameter
Symbol
Conditions
Circuit Current
ICC
Circuit Current in Power-
save Mode
ICC(PS)
Conversion Gain 1
CG1
Conversion Gain 2
CG2
Maximum RF Output Power 1 PO(sat)1
Maximum RF Output Power 2 PO(sat)2
No signal
VPS = 0 V
fRFout = 0.9 GHz, PIFin = −30 dBm
fRFout = 1.9 GHz, PIFin = −30 dBm
fRFout = 0.9 GHz, PIFin = 0 dBm
fRFout = 1.9 GHz, PIFin = 0 dBm
µPC8106TB
µPC8109TB
Unit
MIN. TYP. MAX. MIN. TYP. MAX.
4.5 9 13.5 2.5 5 8.0 mA
− − 10 − − 10 µA
6
4
−4
−6.5
9
7
−2
−4
12 3
6
10 1
4
− −7.5 −5.5
− −10 −7.5
9 dB
7 dB
− dBm
− dBm
Data Sheet P12770EJ2V0DS00
5
5 Page 
µPC8106TB, µPC8109TB
APPLICATION CIRCUIT EXAMPLE (RF = 1.5 GHz, for the µPC8106TB and µPC8109TB)
Spectrum Analyzer
50 Ω
C4
10 000
pF
VCC
RF = 1.5 GHz, matched
6 pF
C6
2.7 nH L2 6
3.5 pF
C5
L1
150 nH
5
RFoutput
VCC
1
IFinput
2
GND
C3
1 000 pF
*
4
PS
3
LOinput
100 pF
C1
100 pF
C2
Signal Generator
50 Ω
Signal Generator
50 Ω
PLoin = –5 dBm
* In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching
circuit.
EXAMPLE OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD
RF Connector →
RFOUT
C5
3 pF
0.5 pF
L2
2.7 nH
C6 6 pF
C3 1 000 pF
L1
150 nH
IFIN
100 pF
C1
1
1 000 pF
P/S
µPC8106TB
100 pF
C2
LOIN
C4 10 000 pF
Data Sheet P12770EJ2V0DS00
11
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet UPC8106TB.PDF ] | |
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