PDF UPC2771T Data sheet ( Hoja de datos )

		


www.DataSheet4U.com
3V, 2400 MHz
MEDIUM POWER SI MMIC AMPLIFIER
UPC2771T
FEATURES
• HIGH GAIN: 20 dB at 900 to 1500 MHz Typical
• HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz
+11 dBm at 1500 MHz
• LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The UPC2771T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with fT approaching 20 GHz.
This amplifier was designed as a driver amplifier for digital
cellular applications. Operating on a 3 volt supply, this IC is
ideally suited for hand-held, portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
GAIN vs. FREQUENCY AND TEMPERATURE
24
TA = -40˚ C
22
20 +85˚ C
TA = +25˚ C
TA = +85˚ C
18
+25˚ C
16 -40˚ C
VCC = 3.0 V
14
0.1
0.3
1.0
Frequency, f (GHz)
3.0
ELECTRICAL CHARACTERISTICS (TA = 25°C, ZL = ZS = 50 Ω, VCC = 3.0 V)
PART NUMBER
SYMBOLS
ICC
GS
fU
P1dB
PSAT
NF
RLIN
RLOUT
ISOL
OIP3
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Circuit Current (no signal)
Small Signal Gain,
f = 900 MHz
f = 1500 MHz
Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 100 MHz)
1 dB Compressed Output Power, f = 900 MHz
f = 1500 MHz
Saturated Output Power,
f = 900 MHz
f = 1500 MHz
Noise Figure,
f = 900 MHz
f = 1500 MHz
Input Return Loss,
f = 900 MHz
f = 1500 MHz
Output Return Loss,
f = 900 MHz
f = 1500 MHz
Isolation,
f = 900 MHz
f = 1500 MHz
SSB OutputThird Order Intercept Point f = 900, 902 MHz
f = 1500, 1502 MHz
UNITS
mA
dB
dB
GHz
dBm
dBm
dBm
dBm
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
UPC2771T
T06
MIN TYP MAX
36 45
19 21 24
17 20 23
1.7 2.1
+9 +11.5
+7 +9.5
+12.5
+11
6 7.5
6 7.5
10 14
10 14
6.5 9.5
5.5 8.5
25 30
25 30
+16
+13
California Eastern Laboratories

1 page