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PDF UPB1004GS Datasheet ( Hoja de datos )

Número de pieza UPB1004GS
Descripción 3V DUAL DOWNCONVERTER AND PLL FREQUENCY SYNTHESIZER
Fabricantes NEC 
Logotipo NEC Logotipo

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UPB1004GS Hoja de datos, Descripción, Manual
PRELIMINARY DATA SHEET
3V DUAL DOWNCONVERTER AND
PLL FREQUENCY SYNTHESIZER
UPB1004GS
FEATURES
• INTEGRATED RF BLOCK:
RF & IF Downconverter + PLL frequency synthesizer
• DOUBLE-CONVERSION: f1stIF = 61.380 MHz
f2ndIF = 4.092 MHz
• ADJUSTABLE GAIN: 20 dB range MIN
• FIXED DIVISION PRESCALER
• LOW POWER CONSUMPTION: 37.5 mA @ 3 V
• SMALL 30 PIN SSOP PACKAGE
• TAPE AND REEL PACKAGING AVAILABLE
DESCRIPTION
The UPB1004GS is a Silicon Monolithic Integrated Circuit
designed for low cost GPS receivers. The IC combines a
double-conversion RF/IF downconverter block and a PLL
frequency synthesizer on one chip. The device operates on a
3 V supply voltage and is housed in a small 30 pin SSOP
package, resulting in low power consumption and reduced
board space. The device is manufactured using the NESAT™
III 20 GHz fT silicon bipolar process.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 3 V, unless otherwise specified)
PART NUMBER
PACKAGE OUTLINE
UPB1004GS
S30
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
ICC Total Circuit Current, No Signals
mA 31.1
RF Downconverter Block (fRFin = 1575.42 MHz, f1stLOin = 1636.80 MHz, PLOin = -10 dBm, ZL = ZS = 50 Ω)
ICC1 Circuit Current 1, No Signals
mA 7.2
CGRF
RF Conversion Gain, PRFin = -40 dBm
dB 9.5
NFRF
RF SSB Noise Figure, PRFin = -40 dBm
dB
PO(sat)RF Maximum IF Output, PRFin = -10 dBm
dBm
-8
LOIF
LO Leakage to IF Pin, fLOin = 1636.80 MHz
dBm
LORF
LO Leakage to RF Pin, fLOin = 1636.80 MHz
dBm
IIP3RF Input 3rd Order Intercept Point, fRFin1 = 1600 MHz,
fRFin2 = 1605 MHz, fLOin = 1570 MHz
dBm
IF Downconverter Block (f1stIFin = 61.38 MHz, f2ndLOin = 65.472 MHz, ZS = 50 , ZO = 2 k)
ICC2 Circuit Current 2, No Signals
mA 2.7
CGIF
IF Conversion Gain at Max. Gain, P1stIFin = -50 dBm
dB
37
NFIF
IF SSB Noise Figure at Max. Gain, P1stIFin = -50 dBm
dB
12
PO(sat)IF
Maximum 2nd IF Output Level at Max. Gain,
P1stIFin = -20 dBm
dBm
-3
VGC Gain Control Voltage, Voltage at Max. Gain of CGIF
V
DGC Gain Control Range
dB 20
LO2ndIF LO Leakage to 2nd IF, f2ndLOin = 65.472 MHz
dBm
LO1stIF LO Leakage to 1st IF, f2ndLOin = 65.472 MHz
dBm
2nd IF Amplifier (f2ndIF= 4.092 MHz, ZS = 50 , ZO = 2 k)
ICC3 Circuit Current 3, No Signals
mA 1.2
|S21|
V2ndIFout
Gain |S21|, ZO = 1 M// 27 pF
Output Voltage, ZO = 1M// 27 pF
dB
mVP-P
37
600
PLL Synthesizer Block
ICC4 Circuit Current 4, PLL, All Blocks Operating
mA 20
fPD Phase Comparison Frequency, PLL Loop
MHz
8.0
VREFin Reference Input Level, ZO = 10 k// 20pF
mVP-P
200
VLP(H) Loop Filter Output Level (H)
V 2.8
VLP(L)
Loop Filter Output Level (L)
V
VREFout Reference Output Voltage, ZO = 1 M// 27 pF
VP-P
1.0
37.5
10
12.5
12.5
-5
-30
-30
-6
3.8
40
15
0
-20
-40
1.7
40
22
8.184
MAX
50.7
12.1
15.5
15.5
-2
4.7
43
18
+3
1.0
2.3
43
31.6
8.4
0.4
California Eastern Laboratories

1 page

UPB1004GS pdf
TEST CIRCUIT
Signal Generator
50
1 PIN
C1
IFMIXin
Spectrum Analyzer
50
Signal Generator
50
GND
C2
RF MIX
out
VCC
C3
RF MIX
in
C4
GND
VCC
VCC
C5
R1
L D1
C6
OSC1
OSC2
C7
R2 GND
VCC
C8
VCC
R3
Vout3
C9 C10
R4
Vout2
Vout1
GND
÷25
÷8
P D ÷2
NOTE: Spectrum Analyzer to measure frequency.
Oscilloscope to measure voltage swing.
UPB1004GS
VCC
C23 VCC
VGC
C22
Target maximum gain.
Apply 1.0V MAX.
IF MIX
out
C21
R6
GND
Spectrum
Analyzer
(High
impedance
probe,
1 M// 0.7 pF)
IFin1
C20
IFin2
C19
50
Signal Generator
Bypass
C18
VCC
C17
C16
IFout
R5
TCXO
out
C15
VCC
C14
TCXO
in
C13
VCC
GND
LOout
C12
VCC
Spectrum (High
Analyzer impedance
or probe,
Oscilloscope 1 M// 0.7 pF)
Spectrum
Analyzer
or
Oscilloscope
50
Signal Generator
Spectrum
Analyzer
or
Oscilloscope
VCC
C11
VCC
COMPONENTS LIST
FORM
Chip Capacitor
Ceramic capacitor
Chip Resistor
Varactor Diode
Chip Inductor
SYMBOL
C1 to C5, C8, C11 to C15,C17, C18, C22, C23
C6, C7
C9
C19
C10
C16, C20
C21
R1, R2
R3
R4
R5, R6
D1
L
VALUE
1000 pF
820 pF
6600 pF
9900 pF
0.2 µF
0.1 µF
0.01 µF
15 k
1.5 k
3 k
2 k
1.57 nH

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