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PDF UPA843TC Datasheet ( Hoja de datos )

Número de pieza UPA843TC
Descripción NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Fabricantes NEC 
Logotipo NEC Logotipo

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UPA843TC Hoja de datos, Descripción, Manual
PRELIMINARY DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA843TC
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Flat-lead 6-pin thin-type ultra super minimold package
• 2 different built-in transistors (2SC5603, 2SC5600)
• Low voltage operation
Q1: Built-in high gain transistor
fT = 13.5 GHz, S21e2 = 10.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 5.0 GHz, S21e2 = 4.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz
BUILT-IN TRANSISTORS
3-pin thin-type ultra super minimold part No.
Q1
2SC5603
Q2
2SC5600
ORDERING INFORMATION
Part Number
µPA843TC
µPA843TC-T1
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative (Unit sample quantity is 50 pcs).
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14679EJ2V0DS00 (2nd edition)
Date Published April 2000 NS CP(K)
Printed in Japan
The mark shows major revised points.
©
1999, 2000

1 page

UPA843TC pdf
DC Characteristics
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
VCE = 1 V
100
µPA843TC
1 000
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
100
10 10
1
0.1 1
10 100
Collector Current IC (mA)
fT Characteristics
Q1
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
18
f = 2 GHz
VCE = 1 V
16
14
12
10
8
6
4
2
0
1 10 100
Collector Current IC (mA)
Gain Characteristics Q1
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
20
f = 2 GHz
18 VCE = 1 V
16
14 MSG.
MAG.
12
10
|S21e|2
8
6
4
1 10 100
Collector Current IC (mA)
1
0.1 1
10 100
Collector Current IC (mA)
Q2
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
12
f = 2 GHz
VCE = 1 V
10
8
6
4
2
0
1 10 100
Collector Current IC (mA)
Q2
INSERTION POWER GAIN,
MAXIMUM AVAILABLE GAIN,
MAXIMUM STABLE GAIN
vs. COLLECTOR CURRENT
12
10
MSG.
8
MAG.
f = 2 GHz
VCE = 1 V
6
|S21e|2
4
2
0
1 10 100
Collector Current IC (mA)
Preliminary Data Sheet P14679EJ2V0DS00
5

5 Page

UPA843TC arduino
µPA843TC
PACKAGE DIMENSIONS
FLAT-LEAD 6 PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm)
1.50±0.1
1.10±0.1
(Top View)
B1 E2 B2
654
Q1 Q2
123
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Preliminary Data Sheet P14679EJ2V0DS00
11

11 Page


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