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PDF UPA801T Data sheet ( Hoja de datos )
| Número de pieza | UPA801T | |
| Descripción | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | |
| Fabricantes | NEC | |
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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA801TC
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 × 2SC5006)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
DESCRIPTION
The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band
to the UHF band.
FEATURES
• Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 transistors (2 × 2SC5006)
ORDERING INFORMATION
Part Number
µPA801TC
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to
perforation side of the tape.
µPA801TC-T1
Taping products
(3 kp/reel)
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPA801TC. Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PTNote
Tj
Tstg
Ratings
20
12
3
100
200 in 1 element
230 in 2 elements
150
–65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.
Unit
V
V
V
mA
mW
˚C
˚C
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. P14548EJ1V1DS00 (1st edition)
Date Published February 2000 N CP(K)
Printed in Japan
©
1999
1 page  
µPA801TC
S-PARAMETERS Q1
VCE = 3 V, IC = 1 mA
FREQUENCY
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
S11
MAG.
ANG.
0.935
0.917
0.885
0.852
0.824
0.799
0.781
0.766
0.760
0.759
0.756
0.752
0.756
0.755
0.762
0.764
0.770
0.771
0.775
0.780
0.783
0.787
0.791
0.790
0.790
0.790
0.791
0.797
0.804
0.812
–30.6
–58.7
–83.8
–107.8
–128.9
–148.1
–165.3
178.7
163.9
150.0
136.9
124.4
112.6
100.9
90.0
79.3
69.1
58.7
49.3
39.4
29.9
20.9
11.9
2.8
–6.0
–14.2
–22.1
–30.1
–38.1
–46.0
VCE = 3 V, IC = 3 mA
FREQUENCY
GHz
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
S11
MAG.
ANG.
0.857
0.803
0.754
0.711
0.687
0.680
0.663
0.658
0.658
0.656
0.663
0.658
0.670
0.672
0.679
0.684
0.690
0.695
0.700
0.701
0.711
0.713
0.723
0.725
0.729
0.732
0.728
0.739
0.746
0.756
–42.7
–78.7
–108.0
–133.4
–154.4
–172.0
172.2
157.8
144.8
132.2
120.8
109.9
99.2
88.7
79.0
69.2
60.0
50.4
41.6
32.5
23.4
14.9
6.6
–1.7
–10.3
–18.0
–25.4
–33.1
–40.7
–48.1
S21
MAG.
ANG.
4.001
3.602
3.244
2.910
2.622
2.351
2.118
1.928
1.761
1.625
1.506
1.405
1.311
1.233
1.157
1.094
1.038
0.981
0.934
0.885
0.846
0.803
0.770
0.732
0.698
0.669
0.641
0.619
0.601
0.574
157.5
137.5
119.5
101.9
86.4
71.6
58.4
45.7
33.9
22.6
11.6
1.1
–9.2
–19.3
–29.1
–38.9
–48.3
–57.7
–66.4
–75.1
–84.0
–93.0
–101.0
–109.1
–116.8
–124.3
–131.7
–138.9
–146.4
–153.7
S21
MAG.
ANG.
9.861
8.253
6.931
5.798
4.995
4.317
3.797
3.376
3.038
2.769
2.543
2.347
2.178
2.037
1.906
1.801
1.702
1.609
1.524
1.448
1.384
1.314
1.261
1.204
1.151
1.105
1.067
1.029
1.004
0.958
150.3
127.1
107.8
90.7
76.6
63.2
51.6
40.7
30.1
20.0
10.1
0.6
–8.8
–18.0
–27.2
–36.4
–45.2
–53.9
–62.6
–71.2
–79.6
–88.2
–96.2
–104.4
–112.3
–120.1
–127.1
–135.4
–143.2
–150.7
S12
MAG.
ANG.
0.033
0.082
0.109
0.129
0.140
0.149
0.154
0.153
0.152
0.150
0.149
0.148
0.141
0.133
0.129
0.122
0.119
0.113
0.105
0.103
0.098
0.099
0.097
0.101
0.106
0.110
0.116
0.125
0.133
0.148
52.0
54.2
38.9
21.3
6.9
–3.0
–15.2
–24.2
–34.4
–42.1
–51.0
–58.9
–65.3
–72.1
–76.6
–84.1
–88.3
–91.8
–95.5
–96.9
–99.6
–101.5
–100.6
–101.3
–102.6
–104.2
–105.4
–109.3
–110.7
–117.1
S12
MAG.
ANG.
0.038
0.072
0.087
0.093
0.103
0.110
0.104
0.110
0.109
0.108
0.111
0.112
0.111
0.110
0.114
0.118
0.119
0.121
0.124
0.128
0.130
0.134
0.139
0.146
0.150
0.158
0.164
0.171
0.177
0.186
65.3
39.2
27.5
18.6
7.4
–2.7
–11.0
–17.9
–22.5
–28.4
–34.1
–40.1
–44.2
–48.1
–52.5
–57.6
–61.6
–66.0
–70.1
–74.6
–79.2
–82.6
–86.5
–92.3
–96.8
–102.0
–106.7
–112.3
–116.4
–122.7
Data Sheet P14548EJ1V1DS00
S22
MAG.
ANG.
0.979
0.938
0.894
0.834
0.785
0.746
0.708
0.680
0.662
0.647
0.633
0.620
0.614
0.605
0.599
0.593
0.592
0.589
0.585
0.585
0.585
0.580
0.580
0.581
0.579
0.580
0.583
0.584
0.585
0.590
–12.9
–25.9
–37.9
–48.3
–57.6
–66.3
–74.4
–82.4
–90.4
–98.4
–106.7
–114.7
–123.0
–131.2
–139.6
–148.1
–157.1
–165.9
–174.6
176.4
167.0
157.7
147.9
138.2
128.5
118.5
108.7
98.7
88.8
78.7
S22
MAG.
ANG.
0.945
0.826
0.719
0.622
0.555
0.501
0.467
0.435
0.417
0.400
0.382
0.374
0.364
0.359
0.350
0.342
0.339
0.335
0.331
0.329
0.328
0.324
0.323
0.323
0.324
0.326
0.329
0.335
0.337
0.344
–21.7
–39.0
–52.7
–62.5
–71.8
–79.9
–87.0
–93.9
–101.6
–108.5
–116.4
–123.9
–131.8
–139.7
–148.5
–156.6
–165.2
–173.8
177.1
168.2
159.0
149.8
139.7
130.4
119.9
110.3
100.2
90.5
80.2
70.1
5
5 Page 
[MEMO]
µPA801TC
Data Sheet P14548EJ1V1DS00
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPA801T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UPA801 | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | NEC |
| UPA801T | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | NEC |
| UPA801TC | NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD | NEC |
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