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Número de pieza | UPA1913 | |
Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
Fabricantes | NEC | |
Logotipo | ||
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No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1913
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1913 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1913 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5A)
RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1913TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–20
Gate to Source Voltage
VGSS
±12
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.5
±18
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Drain
V Body
Gate
Diode
V
A Gate
A
Protection
Diode
Source
W Marking: TE
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13807EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998, 1999
1 page µ PA1913
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0V
Ciss
Coss
Crss
10
−0.1
−1 −10
VDS - Drain to Source Voltage - V
−100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
1
10000
SWITCHING CHARACTERISTICS
1000
100
VDD = −10 V
VGS(on) = −4.0 V
RG = 10 Ω
10
−0.1
−1
ID - Drain Current - A
tf
tr
td(on)
td(off)
−10
DYNAMIC INPUT CHARACTERISTICS
−8
ID = −4.5 A
−6 VDD = −16 V
−10 V
−4
0.1 −2
0.01
0.4
0.6 0.8
1.0 1.2
VF(S-D) - Source to Drain Voltage - V
0
0 1 2 3 4 5 6 7 8 9 10
QG - Gate Charge - nC
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Without Board
100
Mounted on 250 mm2 x 35 µm
Copper Pad
Connected to Drain Electrode
10 in 50 mm x 50 mm x 1.6 mm
FR-4 Board Single Pulse
1
0.1
0.001
0.01
0.1 1
10
PW - Pulse Width - S
100 1000
Data Sheet D13807EJ2V0DS00
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet UPA1913.PDF ] |
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