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PDF UPA1720 Data sheet ( Hoja de datos )
| Número de pieza | UPA1720 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1720
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µ PA1720 is N-Channel MOS Field Effect Transistor designed for DC / DC Converters and power management
application of notebook computers.
FEATURES
• Low On-Resistance
RDS(on)1 = 25.0 mΩ MAX. (VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 33.0 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)
RDS(on)3 = 38.0 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A)
• Low Ciss : Ciss = 800 pF TYP.
• Built-in G-S Protection Diode
• Small and Surface Mount Package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µ PA1720G
Power SOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, All terminals are connected.)
Drain to Source Voltage (VGS = 0)
VDSS
30
V
Gate to Source Voltage (VDS = 0)
VGSS
±20
V
Drain Current (DC)
Drain Current (Pulse) Note1
Total Power Dissipation (TA = 25 °C) Note2
Single Avalanche Current Note3
Single Avalanche Energy Note3
ID(DC)
ID(pulse)
PT
IAS
EAS
±8
±32
2.0
8.0
6.4
A
A
W
A
mJ
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
3. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G13888EJ2V0DS00 (2nd edition)
Date Published March 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999
1 page  
µ PA1720
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
50
40
VGS = 4.0 V
30 4.5 V
10 V
20
10
-50
0 50 100
Tch - Channel Temperature - ˚C
150
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
0.01
0.1 1
10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 16
14
30
VDD = 24 V
15 V
6V
20
12
VGS
10
8
6
10 4
2
0 VDS
ID = 8 A
0
0 5 10 15 20 25
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
VGS = 10 V
0V
10
1
0.1
0.0
0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di / dt = 100 A /µs
VGS = 0 V
100
10
1
0.1
1 10
IF - Drain Current - A
100
Data Sheet G13888EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1720.PDF ] | |
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