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Número de pieza | UPA1717 | |
Descripción | SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
Fabricantes | NEC | |
Logotipo | ||
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No Preview Available ! DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1717
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1717 is P-Channel MOS Field Effect
Transistor designed for power management
applications of notebook computers.
FEATURES
• Low on-state resistance
RDS(on)1 = 33 mΩ MAX. (VGS = −10 V, ID = −3 A)
RDS(on)2 = 59 mΩ MAX. (VGS = −4.5 V, ID = −3 A)
• Low Ciss : Ciss = 830 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1717G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS −30 V
Gate to Source Voltage (VDS = 0 V)
VGSS
# 25 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (TA = 25°C) Note2
ID(DC)
ID(pulse)
PT
#6
# 24
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14047EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
1999, 2000
1 page µ PA1717
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80 Pulsed
60 VGS = −4.5 V
40 −10 V
20
ID = −3 A
0 −50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
−0.01
−0.1 −1 −10
VDS - Drain to Source Voltage - V
−100
1000
REVERSE RECOVERY TIME vs.
DIODE CURRENT
di/dt = 100 A/ µs
VGS = 0 V
100
10
1
−0.1
−1 −10
IF - Diode Current - A
−100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
VGS = −4.5 V
10 0 V
1
0.1
0.01
0.00
0.50
1.00
VSD - Source to Drain Voltage - V
1.50
1000
100
SWITCHING CHARACTERISTICS
tr
td(off)
tf
10
1
−0.1
td(on)
VGS(on) = −10 V
VDD = −15 V
RG = 6 Ω
−1 −10 −100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
ID = −6 A
−30
VDS = −24 V
−15 V
−6 V
−20
−12
VGS −10
−8
−6
−10 −4
VDS −2
0
0 5 10 15 20
QG - Gate Charge - nC
Data Sheet G14047EJ1V0DS00
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet UPA1717.PDF ] |
Número de pieza | Descripción | Fabricantes |
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