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PDF UPA1708 Data sheet ( Hoja de datos )
| Número de pieza | UPA1708 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1708
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for DC/DC converters and power management
switch.
FEATURES
• Low on-resistance
RDS(on)1 = 18.0 mΩ (TYP.) (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 28.0 mΩ (TYP.) (VGS = 4.5 V, ID = 3.5 A)
• Low Ciss : Ciss = 730 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1708G
Power SOP8
PACKAGE DRAWINGS (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
EQUIVARENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected)
Drain to Source Voltage Note1
VDSS 40 V
Gate to Source Voltage Note2
VGSS ±25 V
Drain Current (DC)
Drain Current (pulse) Note3
Total Power Dissipation (TA = 25°C) Note4
ID(DC)
ID(pulse)
PT
±7.0
±28
2.0
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to + 150 °C
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. VGS = 0 V
2. VDS = 0 V
3. PW ≤ 10 µs, Duty Cycle ≤ 1 %
4. Mounted on ceramic substrate of 1200 mm2 x 1.7mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Document No. G13603EJ1V0DS00 (1st edition)
Date Published November 1998 NS CP(K)
Printed in Japan
©
1998
1 page  
µ PA1708
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
VGS = 4.5 V
30
10 V
20
10
0 ID = 3.5 A
-40 -20 0 20 40 60 80 100 120 140
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
100
Ciss
Coss
Crss
0.1 1 10 100
VDS - Drain to Source Voltage - V
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100A/µs
VGS = 0 V
100
10
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
VGS =10 V
10
0V
1
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
tr
100
tf
td(off)
td(on)
10
VDS = 20 V
VGS = 10 V
1 RG = 10 Ω
0.1 1 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
ID = 7 A
VDD = 32 V
20 V
8V
VGS
10
40 8
30 6
20 4
10 VDS
2
0
0 5 10 15 20
QG - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1708.PDF ] | |
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