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PDF UPA1520B Data sheet ( Hoja de datos )

Número de pieza UPA1520B
Descripción N-CHANNEL POWER MOS FET ARRAY SWITCHING USE
Fabricantes NEC 
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DATA SHEET
Compound Field Effect Power Transistor
µPA1520B
N-CHANNEL POWER MOS FET ARRAY
SWITCHING USE
DESCRIPTION
The µPA1520B is N-channel Power MOS FET Array that
built in 4 circuits designed for solenoid, motor and lamp
driver.
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
ID (DC) = ±2.0 A
RDS (on) 1 0.17 MAX. (VGS = 10 V, ID = 1 A)
RDS (on) 1 0.25 MAX. (VGS = 4 V, ID = 1 A)
• Low Input Capacitance Ciss = 220 pF TYP.
ORDERING INFORMATION
PACKAGE DIMENSIONS
in millimeters
26.8 MAX.
4.0
1.4 0.6±0.1
2.54
1 2 3 4 5 6 7 8 910
1.4
0.5±0.1
Type Number
µPA1520BH
Package
10 Pin SIP
CONNECTION DIAGRAM
3579
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage VDSSNote 1
30
V
Gate to Source Voltage VGSSNote 2
±20
V
Drain Current (DC)
ID(DC)
±2.0 A/unit
Drain Current (pulse)
ID(pulse)Note 3
±8.0
A/unit
Total Power Dissipation PT1Note 4
Total Power Dissipation PT2Note 5
28 W
3.5 W
Channel Temperature TCH
150 °C
Storage Temperature
Tstg
–55 to +150 °C
24 68
1
ELECTRODE CONNECTION
2, 4, 6, 8 : Gate
3, 5, 7, 9 : Drain
1, 10 : Source
10
Notes 1. VGS = 0
3. PW 10 µs, Duty Cycle 1 %
3. 4 circuits, TA = 25 °C
2. VDS = 0
4. 4 circuits, TC = 25 °C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
© 1995

1 page




UPA1520B pdf
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
200
VGS = 4 V
150
VGS =10 V
100
50
0
- 50 0
ID = 1 A
50 100 150
TCH - Channel Temperature - °C
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
Coss f = 1 MHz
Ciss
Crss
100
µPA1520B
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
10
VGS = 10 V
1.0
VGS = 0
0.1
0.01
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
td(off)
tf
100 tr
10
0.1
10 000
1 10
VDS - Drain to Source Voltage - V
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1000
100
0.01
0.1 1.0
ID - Drain Current - A
10
10
0.01
td(on)
VDD 15 V
VGS = 10 V
RG =10
0.1 1.0 10
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 ID = 2 A 12
VGS
10
20 8
6
10 4
0
02
VDS
6 10
Qg - Gate Charge - nC
2
0
14
5

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