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Número de pieza | UN521M | |
Descripción | Silicon NPN epitaxial planer transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UN521M (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! Transistors with built-in Resistor
UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN5211
8A
10kΩ
q UN5212
8B
22kΩ
q UN5213
8C
47kΩ
q UN5214
8D
10kΩ
q UN5215
8E
10kΩ
q UN5216
8F
4.7kΩ
q UN5217
8H
22kΩ
q UN5218
8I
0.51kΩ
q UN5219
8K
1kΩ
q UN5210
8L
47kΩ
q UN521D
8M
47kΩ
q UN521E
8N
47kΩ
q UN521F
8O
4.7kΩ
q UN521K
8P
10kΩ
q UN521L
8Q
4.7kΩ
q UN521M
EL
2.2kΩ
q UN521N
EX
4.7kΩ
q UN521T
EZ
22kΩ
q UN521V
FD
2.2kΩ
q UN521Z
FF
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
1 page UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UN5212
IC — VCE
160
140
IB=1.0mA
0.9mA
120 0.8mA
100
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
80
0.3mA
60
40 0.2mA
20 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1
0.03
25˚C
– 25˚C
Ta=75˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
400
VCE=10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
Characteristics charts of UN5213
IC — VCE
160
Ta=25˚C
140 IB=1.0mA 0.9mA
0.8mA
0.7mA
120 0.6mA
100 0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
hFE — IC
400
VCE=10V
350
300 Ta=75˚C
250 25˚C
– 25˚C
200
150
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
5
5 Page UN5211/5212/5213/5214/5215/5216/5217/5218/5219/5210/
Transistors with built-in Resistor 521D/521E/521F/521K/521L/521M/521N/521T/521V/521Z
Characteristics charts of UN521D
IC — VCE
30
Ta=25˚C
0.9mA
0.8mA 0.5mA
25
0.7mA
0.6mA
0.4mA
0.3mA
IB=1.0mA
20
15
0.2mA
10 0.1mA
5
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
160
VCE=10V
120
Ta=75˚C
25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
1.5 2.0 2.5 3.0 3.5 4.0
Input voltage VIN (V)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
Characteristics charts of UN521E
IC — VCE
60
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
Ta=25˚C
50
40
0.3mA 0.2mA
30
0.4mA
0.5mA
0.1mA
20
10
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
160
VCE=10V
Ta=75˚C
120
25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
11
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet UN521M.PDF ] |
Número de pieza | Descripción | Fabricantes |
UN5210 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN5211 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
UN5212 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN5213 | Silicon NPN epitaxial planar type | Panasonic Semiconductor |
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