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Número de pieza | UN511E | |
Descripción | Silicon PNP epitaxial planer transistor | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UN511E (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! Transistors with built-in Resistor
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q S-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
Unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Resistance by Part Number
Marking Symbol
q UN5111
6A
q UN5112
6B
q UN5113
6C
q UN5114
6D
q UN5115
6E
q UN5116
6F
q UN5117
6H
q UN5118
6I
q UN5119
6K
q UN5110
6L
q UN511D
6M
q UN511E
6N
q UN511F
6O
q UN511H
6P
q UN511L
6Q
q UN511M
EI
q UN511N
EW
q UN511T
EY
q UN511V
FC
q UN511Z
FE
(R1)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51Ω
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
2.2kΩ
4.7kΩ
22kΩ
2.2kΩ
4.7kΩ
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC–70
S–Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
1 page UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN5112
–160
–140
–120
–100
– 80
– 60
– 40
IC — VCE
Ta=25˚C
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN5113
–160
–140
–120
–100
IC — VCE
IB= –1.0mA Ta=25˚C
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
–80 –0.4mA
–60 –0.3mA
–40 –0.2mA
–20 –0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
– 25˚C
Ta=75˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE= –10V
Ta=75˚C
300
25˚C
200
– 25˚C
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
5
5 Page UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
Transistors with built-in Resistor 511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
Characteristics charts of UN511D
IC — VCE
– 60
IB= –1.0mA
– 0.9mA
Ta=25˚C
– 0.8mA
– 50
– 40
– 0.3mA
–30 –0.2mA
– 0.7mA
– 0.6mA
– 0.5mA
–20 –0.4mA
– 0.1mA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
160
VCE= –10V
Ta=75˚C
120
25˚C
80 –25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
–3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
–1.5
–2.0 –2.5 –3.0 –3.5
Input voltage VIN (V)
– 4.0
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN511E
IC — VCE
– 60
IB= –1.0mA
– 0.9mA
–0.8mA –0.7mA
– 50
Ta=25˚C
– 40
– 0.3mA
–30 –0.2mA
– 0.6mA
– 0.5mA
– 0.4mA
–20 –0.1mA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
hFE — IC
400
VCE=–10V
300
200
Ta=75˚C
100 25˚C
– 25˚C
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
11
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet UN511E.PDF ] |
Número de pieza | Descripción | Fabricantes |
UN5110 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN5111 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN5112 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
UN5113 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
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