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PDF UN221F Data sheet ( Hoja de datos )

Número de pieza UN221F
Descripción Silicon NPN epitaxial planer transistor
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! UN221F Hoja de datos, Descripción, Manual

Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2211
8A
10k
q UN2212
8B
22k
q UN2213
8C
47k
q UN2214
8D
10k
q UN2215
8E
10k
q UN2216
8F
4.7k
q UN2217
8H
22k
q UN2218
8I
0.51k
q UN2219
8K
1k
q UN2210
8L
47k
q UN221D
8M
47k
q UN221E
8N
47k
q UN221F
8O
4.7k
q UN221K
8P
10k
q UN221L
8Q
4.7k
q UN221M
EL
2.2k
q UN221N
EX
4.7k
q UN221T
EZ
22k
q UN221V
FD
2.2k
q UN221Z
FF
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
4.7k
4.7k
47k
47k
47k
2.2k
22k
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1

1 page




UN221F pdf
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2212
IC — VCE
160
140
IB=1.0mA
0.9mA
120 0.8mA
100
Ta=25˚C
0.7mA
0.6mA
0.5mA
0.4mA
80
0.3mA
60
40 0.2mA
20 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1
0.03
25˚C
– 25˚C
Ta=75˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
400
VCE=10V
300
Ta=75˚C
200
25˚C
– 25˚C
100
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
0.4 0.6 0.8 1.0 1.2 1.4
Input voltage VIN (V)
Characteristics charts of UN2213
IC — VCE
160
Ta=25˚C
140 IB=1.0mA 0.9mA
0.8mA
0.7mA
120 0.6mA
100 0.5mA
0.4mA
80
0.3mA
60
0.2mA
40
20 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
25˚C
Ta=75˚C
0.1
0.03 –25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
hFE — IC
400
VCE=10V
350
300 Ta=75˚C
250 25˚C
– 25˚C
200
150
100
50
0
1 3 10 30 100 300 1000
Collector current IC (mA)
5

5 Page





UN221F arduino
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN221D
IC — VCE
30
Ta=25˚C
0.9mA
0.8mA 0.5mA
25
0.7mA
0.6mA
0.4mA
0.3mA
IB=1.0mA
20
15
0.2mA
10 0.1mA
5
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1
0.03
25˚C
– 25˚C
Ta=75˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
160
VCE=10V
120
Ta=75˚C
25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
10000
3000
1000
IO — VIN
VO=5V
Ta=25˚C
300
100
30
10
3
1
1.5 2.0 2.5 3.0 3.5 4.0
Input voltage VIN (V)
VIN — IO
100 VO=0.2V
Ta=25˚C
30
10
3
1
0.3
0.1
0.03
0.01
0.1
0.3 1 3 10 30
Output current IO (mA)
100
Characteristics charts of UN221E
IC — VCE
60
IB=1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
Ta=25˚C
50
40
0.3mA 0.2mA
30
0.4mA
0.5mA
0.1mA
20
10
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
Ta=75˚C
0.3
25˚C
0.1
0.03
– 25˚C
0.01
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
hFE — IC
160
VCE=10V
Ta=75˚C
120
25˚C
– 25˚C
80
40
0
1 3 10 30 100 300 1000
Collector current IC (mA)
11

11 Page







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