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PDF UN212X Data sheet ( Hoja de datos )
| Número de pieza | UN212X | |
| Descripción | Silicon PNP epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
s Resistance by Part Number
Marking Symbol (R1)
q UN2121
7A
2.2kΩ
q UN2122
7B
4.7kΩ
q UN2123
7C
10kΩ
q UN2124
7D
2.2kΩ
q UN212X
7I
0.27kΩ
q UN212Y
7Y
3.1kΩ
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
–50
–50
–500
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
1
1 page  
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Characteristics charts of UN2124
– 300
IC — VCE
Ta=25˚C
– 250
– 200
–150
–100
– 50
IB= –1.0mA
– 0.9mA
– 0.8mA
– 0.7mA
– 0.6mA
– 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
– 0.1mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
– 0.03
– 25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
400
VCE= –10V
350
300
250
Ta=75˚C
200 25˚C
150 –25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
24
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
4
0
–0.1 –0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–10000
– 3000
–1000
IO — VIN
VO= – 5V
Ta=25˚C
– 300
–100
– 30
–10
–3
–1
– 0.4
–0.6 –0.8 –1.0 –1.2
Input voltage VIN (V)
–1.4
–100
– 30
–10
VIN — IO
VO= – 0.2V
Ta=25˚C
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Output current IO (mA)
Characteristics charts of UN212X
– 240
IC — VCE
Ta=25˚C
– 200
–160
–120
– 80
IB= –1.6mA
–1.4mA
–1.2mA
–1.0mA
– 0.8mA
– 0.6mA
–40 –0.4mA
– 0.2mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
– 30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
– 25˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
240
VCE= –10V
200
160
Ta=75˚C
120
25˚C
80
– 25˚C
40
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet UN212X.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UN2121 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
| UN2122 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
| UN2123 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
| UN2124 | Silicon PNP epitaxial planer transistor | Panasonic Semiconductor |
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