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Número de pieza | UMD12N | |
Descripción | Power management (dual digital transistors) | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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No Preview Available ! Transistors
Power management
(dual digital transistors)
EMD12 / UMD12N
EMD12 / UMD12N
!Features
1) Both the DTA144E and DTC144E in a EMT or UMT
package.
!Equivalent circuit
(3) (2) (1)
R1 R2
R2 R1
(4) (5) (6)
!Package, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMD12
EMT6
D12
T2R
8000
UMD12N
UMT6
D12
TR
3000
!Absolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Symbol
VCC
VIN
Output current
IC
IO
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
∗1 120mW per element must not be exceeded.
PNP type negative symbols have been omitted
Limits
50
40
−10
100
30
150(TOTAL)
150
−55~+150
Unit
V
V
mA
mA
mW ∗1
°C
°C
!External dimensions (Units : mm)
EMD12
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
ROHM : EMT6
UMD12N
Each lead has same dimensions
1.25
2.1
ROHM : UMT6
EIAJ : SC-88
0.1Min.
Each lead has same dimensions
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Input voltage
VI (off)
VI (on)
−
3
Output voltage
VO (on)
−
Input current
II −
Output current
IO (off)
−
DC current gain
GI 68
Transition frequency
fT −
Input resistance
R1 32.9
Resistance ratio
R2 / R1
0.8
∗Transition frequency of the device. PNP type negative symbols have been omitted
Typ.
−
−
−
−
−
−
250
47
1
Max.
0.5
−
0.3
0.18
0.5
−
−
61.1
1.2
Unit
V
V
V
mA
µA
−
MHz
kΩ
−
Conditions
VCC=5/−5V, IO=100/−100µA
VO=0.3/−0.3V, IO=2/−2mA
IO=10/−10mA, II=0.5/−0.5mA
VI=5/−5V
VCC=50/−50V, VI=0V
IO=5/−5mA, VO=5/−5V
VCE=10/−10V, IE=−5/5mA, f=100MHz ∗
−
−
1 page |
Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet UMD12N.PDF ] |
Número de pieza | Descripción | Fabricantes |
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