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PDF UMA6N Data sheet ( Hoja de datos )
| Número de pieza | UMA6N | |
| Descripción | Emitter common (dual digital transistors) | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Transistors
EMA6 / UMA6N
Emitter common (dual digital transistors)
EMA6 / UMA6N
zFeature
1) Two DTA144T chips in a EMT or UMT package.
zEquivalent circuit
EMA6 / UMA6N
(3) (2) (1)
R1 R1
(4) (5)
zPackage, marking, and packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMA6
EMT5
A6
T2R
8000
UMA6N
UMT5
A6
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 120mW per element must not be exceeded.
Symbol
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
Limits
−50
−50
−5
−100
150(TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW ∗1
°C
°C
zExternal dimensions (Unit : mm)
EMA6
(4) (3)
(2)
(5) (1)
1.2
1.6
ROHM : EMT5
Each lead has same dimensions
UMA6N
1.25
2.1
0.1Min.
ROHM : UMT5
EIAJ : SC-88A
Each lead has same dimensions
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage
BVCBO
Collector-emitter breakdown voltage
BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage
VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Input resistance
∗Transition frequency of the device.
R1
Min.
−50
−50
−5
−
−
−
100
−
32.9
Typ.
−
−
−
−
−
−
250
250
47
Max.
−
−
−
−0.5
−0.5
−0.3
600
−
61.1
Unit
V
V
V
µA
µA
V
−
MHz
kΩ
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −50V
VEB= −4V
IC/IB= −5mA/ −0.5mA
VCE/IC= −5V/ −1mA
VEB= −10V, IE=5mA, f=100MHz ∗
−
Rev.A
1/2
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet UMA6N.PDF ] | |
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