DataSheet.es    


PDF BU1508DX Data sheet ( Hoja de datos )

Número de pieza BU1508DX
Descripción Silicon Diffused Power Transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de BU1508DX (archivo pdf) en la parte inferior de esta página.


Total 7 Páginas

No Preview Available ! BU1508DX Hoja de datos, Descripción, Manual

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4.5 A; IB = 1.1 A
IF = 4.5 A
ICM = 4.5 A; IB(end) = 1.1 A
TYP.
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
35
1.0
-
-
0.6
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
35
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
3.6
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.300

1 page




BU1508DX pdf
Philips Semiconductors
Silicon Diffused Power Transistor
IC / A
100
ICM max
10 IC max
= 0.01
II
tp =
10 us
Ptot max
1
100 us
I
0.1
1 ms
10 ms
DC
0.01
1
10 100 1000
VCE / V
Fig.13. Forward bias safe operating area. Ths = 25˚C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30 ± 5 newton force on the centre of
the envelope.
Product specification
BU1508DX
September 1997
5
Rev 1.300

5 Page










PáginasTotal 7 Páginas
PDF Descargar[ Datasheet BU1508DX.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BU1508DXSilicon Diffused Power TransistorNXP Semiconductors
NXP Semiconductors
BU1508DXSILICON POWER TRANSISTORSavantIC
SavantIC

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar