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PDF IL755B Data sheet ( Hoja de datos )
| Número de pieza | IL755B | |
| Descripción | BIDIRECTIONAL INPUT DARLINGTON OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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IL755B
BIDIRECTIONAL INPUT
DARLINGTON OPTOCOUPLER
FEATURES
• Very High Current Transfer Ratio (500% min.)
IL755B-1: 750% at IF=2 mA, VCE=5 V
IL755B-2: 1000% at IF=1 mA, VCE=5 V
• BVCEO >60 V
• Isolation Test Voltage, 5300 VACRMS
• AC or Polarity Insensitive Inputs
• No Base Connection
• High Isolation Resistance, 1012Ω
• Low Coupling Capacitance
• Standard Plastic DIP Package
• Underwriters Lab Approval #E52744
• VDE #0884 Available with Option 1
Dimensions in inches (mm)
321
.248 (6.30)
.256 (6.50)
4 56
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
pin one
ID.
Anode/
Cathode
Catho e/
Anode
1
2
NC 3
6 Base
5 Collector
4 Emitter
.130 (3.30)
.138 (3.50)
.300 (7.62)
Typ.
DESCRIPTION
The IL755B is a bidirectional input, optically cou-
pled isolator consisting of two Gallium Arsenide
infrared emitters and a silicon photodarlington sen-
sor.
4°
Typ.
.018 (0.45)
.022 (0.55)
.032 (0.80)
Min.
.031 (0.80)
.035 (0.90)
.100 (2.54) Typ.
Maximum Ratings (at 25°C)
Emitter (Drive Circuit)
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 55°C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage ..............60 V
Emitter-Collector Breakdown Voltage ..............12 V
Power Dissipation at 25°C Ambient ...........200 mW
Derate Linearly from 25°C......................2.6 mW/°C
Package
Isolation Test Voltage
(PK), t=1 sec.................................. 5300 VACRMS
Dissipation at 25°C.....................................250 mW
Derate Linearly from 25°C(2) .................3.3 mW/°C
Creepage ................................................ 7 min mm
Clearance................................................ 7 min mm
Isolation Resistance
TA=25°C.................................................. ≥1012 Ω
TA=100°C................................................ ≥1011 Ω
Storage Temperature(2) ..............–55°C to +150°C
Operating Temperature ................–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
Electrical Characteristics (TA=25°C)
Symbol Min.
Emitter
Forward Voltage(1)
Detector(2)
VF
Breakdown Voltage, BVCEO
Collector-Emitter
60
Leakage Current,
Collector-Emitter
ICEO
Package
Current Transfer
Ratio(2)
IL755B-1
CTR
750
IL755B-2
1000
Saturation Voltage,
Collector-Emitter
Turn-On Time
VCEsat
ton
Typ.
1.25
75
1.0
18° Typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.114(2.90)
.130 (3.30)
Max. Unit Condition
1.5 V
IF=10 mA
V IC=1 mA,
IF=0
100 nA VCE=10 V,
IF=0
% IF=± 2 mA,
VCE=5 V
% IF=± 1 mA,
VCE=5 V
1.0 V
IC=10 mA,
IF=± 10 mA
200 µs VCC=10 V
Turn-Off Time
toff
200 µs IF=± 2 mA,
RL=100 Ω
Notes:
1. Indicates JEDEC registered data.
5–1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IL755B.PDF ] | |
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