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PDF IL66B Data sheet ( Hoja de datos )

Número de pieza IL66B
Descripción PHOTODARLINGTON OPTOCOUPLER
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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IL66B
PHOTODARLINGTON
OPTOCOUPLER
FEATURES
• Internal RBE for High Stability
• High Current Transfer Ratio
at IF=2 mA, VCE=5 V
IL66B-1, 200% min.
IL66B-2, 750% min.
• Withstand Test Voltage, 5300 VACRMS
• No Base Connection
• High Isolation Resistance
• Standard Plastic DIP Package
• Underwriters Lab Approval #E52744
V VDE 0884 Available with Option 1
DE
DESCRIPTION
The IL66B is an optically coupled isolator employ-
ing a Gallium Arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accom-
plished while maintaining a high degree of isolation
between driving and load circuits. They can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
Maximum Ratings (at 25°C)
Emitter
Peak Reverse Voltage ........................................6 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C..........................100 mW
Derate Linearly from 55°C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage.............. 60 V
Emitter-Collector Breakdown Voltage................ 5 V
Power Dissipation at 25°C Ambient ...........200 mW
Derate Linearly from 25°C......................2.6 mW/°C
Package
Isolation Test Voltage (t=1 sec.) ........ 5300 VACRMS
Isolation Resistance
VIO=500 V, TA=25°C ............................... 1012
VIO=500 V, TA=100°C ............................. 1011
Total Dissipation at 25°C ............................250 mW
Derate Linearly from 25°C......................3.3 mW/°C
Creepage Path ........................................ 7 min mm
Clearance Path........................................ 7 min mm
Storage Temperature....................–55°C to +150°C
Operating Temperature ................–55°C to +100°C
Lead Soldering Time at 260°C .................... 10 sec.
Dimensions in inches (mm)
321
.248 (6.30)
.256 (6.50)
4 56
.335 (8.50)
.343 (8.70)
pin one
ID.
Anode 1
Cathode 2
NC 3
6 NC
5 Collector
4 Emitter
.039
(1.00)
min.
.130 (3.30)
.138 (3.50)
.300 (7.62)
typ.
4°
typ.
.018 (0.45)
.022 (0.55)
.031 (0.80)
min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25) typ.
.300 (7.62)
.347 (8.82)
.114 (2.90)
.130 (3.30)
Electrical Characteristics (TA=25°C)
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.25 1.5
0.01 100
25
V
µA
pF
IF=10 mA
VR=3.0 V
VR=0 V
Breakdown Voltage
Collector-Emitter
BVCEO
60
V IC=100 µA,
IF=0
Leakage Current
Collector-Emitter
ICEO
1.0 100 nA VCE=50 V,
IF=0
Package
Current Transfer Ratio CTR
IL66B-1
IL66B-2
200
750 1000
IF=2 mA,
VCE=5 V
%
%
Saturation Voltage
Collector-Emitter
Turn-On,Turn-Off
Time
VCEsat
ton,toff
1.0 V
200 µs
IC=10 mA,
IF=10 mA
VCC=10 V
IF=2 mA,
RL=100
5–1
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