|
|
PDF IL4108 Data sheet ( Hoja de datos )
| Número de pieza | IL4108 | |
| Descripción | ZERO VOLTAGE CROSSING 800 V TRIAC DRIVER OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IL4108 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
IL4108
ZERO VOLTAGE CROSSING
800 V TRIAC DRIVER OPTOCOUPLER
FEATURES
• On-State Current, 300 mA
• Zero Voltage Crossing
• Blocking Voltage, 800 V
• Isolation Test Voltage 5300 VACRMS
• High Input Sensitivity
IFT=2 mA, PF=1.0
IFT=5 mA, PF≤1.0
• High Static dv/dt 10,000 V/µs
• Inverse Parallel SCRs Provide Commutating
dv/dt >10K V/µs
• Very Low Leakage <10 µA
• Small 6-Pin DIP Package
• Underwriters Lab File #E52744
• VDE Approval #0884 (Optional with Option 1,
Add -X001 Suffix)
Maximum Ratings
Emitter
Reverse Voltage ..................................................... 6 V
Forward Current ................................................ 60 mA
Surge Current ....................................................... 2.5 A
Thermal Resistance....................................... 750 °C/W
Derate from 25°C ...................................... 1.33 mW/°C
Detector
Peak Off-state Voltage......................................... 800 V
Peak Reverse Voltage ......................................... 800 V
RMS On-state Current ..................................... 300 mA
Single Cycle Surge.................................................. 3 A
Thermal Resistance....................................... 125 °C/W
Total Power Dissipation ................................... 500 mW
Derate from 25°C ........................................ 6.6 mW/°C
Package
Isolation Test Voltage (between emitter
and detector, climate per DIN 40046,
part 2, Nov. 74 (t=1 min.).................... 5300 VACRMS
Pollution Degree (DIN VDE 0109) .............................. 2
Creepage Distance ........................................... ≥7 mm
Clearance.......................................................... ≥7 mm
Comparative Tracking Index per DIN IEC
112/VDE 0303 part 1, Group IIIa per
DIN VDE 6110................................................... ≥175
Isolation Resistance
VIO=500 V, TA=25°C .................................... ≥1012 Ω
VIO=500 V, TA=100°C .................................. ≥1011 Ω
Storage Temperature Range ............. –55°C to +125°C
Ambient Temperature Range ............ –55°C to +100°C
Soldering Temperature (max. ≤10 sec.
dip soldering ≥0.5 mm from
case bottom)................................................... 260°C
Package Dimensions in inches (mm)
.248 (6.30)
.256 (6.50)
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
321
4 56
.335 (8.50)
.343 (8.70)
Pin One ID. LED
Anode 1
6 Triac
MT2
LED
Cathode
2
Substrate
5 do not
connect
NC 3 ZCC*
4 Triac
MT1
*Zero Crossing Circuit
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
.110 (2.79)
.150 (3.81)
DESCRIPTION
The IL4108 consists of a GaAs IRLED optically coupled to a photosensi-
tive zero crossing TRIAC network. The TRIAC consists of two inverse
parallel connected monolithic SCRs. These three semiconductors are
assembled in a six pin 0.3 inch dual in-line package, using high insula-
tion double molded, over/under leadframe construction.
High input sensitivity is achieved by using an emitter follower pho-
totransistor and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).
The IL4108 uses two discrete SCRs resulting in a commutating dV/dt
greater than 10KV/µs. The use of a proprietary dv/dt clamp results in a
static dV/dt of greater than 10KV/µs. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the pho-
totransistor, disabling the first stage SCR predriver.
The zero cross line voltage detection circuit consists of two enhance-
ment MOSFETS and a photodiode. The inhibit voltage of the network is
determined by the enhancement voltage of the N-channel FET. The P-
channel FET is enabled by a photocurrent source that permits the FET
to conduct the main voltage to gate on the N-channel FET. Once the
main voltage can enable the N-channel, it clamps the base of the pho-
totransistor, disabling the first stage SCR predriver.
The 800V blocking voltage permits control of off-line voltages up to
240VAC, with a safety factor of more than two, and is sufficient for as
much as 380VAC.
The IL4108 isolates low-voltage logic from 120, 240, and 380 VAC lines
to control resistive, inductive, or capacitive loads including motors, sole-
noids, high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equip-
ment, and consumer appliances.
5–141
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IL4108.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IL410 | ZERO VOLTAGE CROSSING 600 V TRIAC DRIVER OPTOCOUPLER | Siemens Semiconductor Group |
| IL41050 | Isolated High-Speed CAN Transceiver |  NVE |
| IL4108 | ZERO VOLTAGE CROSSING 800 V TRIAC DRIVER OPTOCOUPLER | Siemens Semiconductor Group |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |