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PDF IL217A Data sheet ( Hoja de datos )
| Número de pieza | IL217A | |
| Descripción | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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IL215A/216A/217A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
• FEATURES
• High Current Transfer Ratio, IF=1 mA
IL215A—20% Minimum
IL216A—50% Minimum
IL217A—100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL215A/216A/217A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including
a DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL215A//216A/217A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
The high CTR at low input current is designed for
low power consumption requirements such as
CMOS microprocessor interfaces.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current ........................ 60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C ......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ...............30 V
Emitter-Collector Breakdown Voltage .................7 V
Collector-Base Breakdown Voltage ..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C ......................2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector).....................................280 mW
Derate Linearly from 25°C ......................3.3 mW/°C
Storage Temperature .................. –55°C to +150°C
Operating Temperature .............. –55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
Characteristics (TA=25°C)
Symbol
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Dark Current,
Collector-Emitter
BVCEO
BVECO
ICEOdark
Capacitance,
Collector-Emitter
CCE
Package
DC Current Transfer
Ratio
IL215A
IL216A
IL217A
CTRDC
Saturation Voltage,
Collector-Emitter
VCEsat
Isolation Test Voltage
Capacitance,
Input to Output
VIO
CIO
Resistance,
Input to Output
Switching Time
RIO
ton,toff
Min. Typ.
1.0
0.1
25
30
7
5
10
20 50
50 80
100 130
2500
0.5
100
3.0
Max. Unit
Condition
1.5 V
100 µA
pF
IF=1 mA
VR=6.0 V
VR=0
V
V
50 nA
pF
IC=10 µA
IE=10 µA
VCE=10 V
IF=0
VCE=0
% IF=10 mA,
VCE=5 V
0.5 IF=1 mA,
IC=0.1 mA
VACRMS
pF
GΩ
µs IC=2 mA,
RE=100 Ω,
VCE=10 V
5–1
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| PDF Descargar | [ Datasheet IL217A.PDF ] | |
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