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PDF IL211AT Data sheet ( Hoja de datos )

Número de pieza IL211AT
Descripción PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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IL211AT/IL212AT/IL213AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
High Current Transfer Ratio
IL211AT—20% Minimum
IL212AT—50% Minimum
IL213AT—100% Minimum
Isolation Voltage, 2500 VACRMS
Electrical Specifications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211AT/212AT/213AT are optically coupled
pairs with a Gallium Arsenide infrared LED and a
silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The IL211AT//212AT/
213AT comes in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
IF=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 30 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 280 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature ..................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.3
0.1
25
Breakdown Voltage BVCEO
BVECO
Collector-Emitter
30
7
Dark Current
Collector-Emitter
ICEOdark
5
Capacitance
Package
CCE
10
DC Current Transfer CTRDC
IL211AT
20 50
IL212AT
50 80
IL213AT
100 130
Collector-Emitter
Saturation Voltage VCE sat
Isolation Test
Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
VIO 2500
CIO 0.5
RIO
tON, tOFF
100
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
V
V
50 nA
pF
%
Condition
IF=10 mA
VR=6.0 V
VR=0
IC=10 µA
IE=10 µA
VCE=10 V,
IF=0
VCE=0
IF=10 mA
VCE=5 V
0.4 IF=10 mA,
IC=2.0 mA
VACRMS
pF
G
µs IC=2 mA,
RE=100 ,
VCE=10 V
Semiconductor Group
4–4
10.95

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