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PDF IL211A Data sheet ( Hoja de datos )

Número de pieza IL211A
Descripción PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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IL211A/212A/213A
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• High Current Transfer Ratio
IL211A—20% Minimum
IL212A—50% Minimum
IL213A—100% Minimum
• Isolation Voltage, 2500 VACRMS
• Electrical Specifications Similar to
Standard 6 Pin Coupler
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL211A/212A/213A are optically coupled pairs
with a Gallium Arsenide infrared LED and a silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the device while
maintaining a high degree of electrical isolation
between input and output. The IL211A//212A/213A
comes in a standard SOIC-8 small outline package
for surface mounting which makes it ideally suited
for high density applications with limited space. In
addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A choice of 20, 50, and 100% minimum CTR at
IF=10 mA makes these optocouplers suitable for a
variety of different applications.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25°C............................90 mW
Derate Linearly from 25°C......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................7 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25°C2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ....................................280 mW
Derate Linearly from 25°C......................3.3 mW/°C
Storage Temperature ...................–55°C to +150°C
Operating Temperature ...............–55°C to +100°C
Soldering Time at 260°C ............................. 10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.3
0.1
25
Breakdown Voltage
Dark Current,
Collector-Emitter
BVCEO
BVECO
ICEOdark
30
7
5
Capacitance,
Collector-Emitter
CCE
10
Package
DC Current Transfer CTRDC
Ratio
IL211A
20 50
IL212A
50 80
IL213A
100 130
Saturation Voltage,
Collector-Emitter
VCEsat
Isolation Test
Voltage
VIO 2500
Capacitance,
Input toOutput
CIO
0.5
Resistance,
Input to Output
RIO
100
Switching Time
ton,toff
3.0
Max. Unit
Condition
1.5 V
100 µA
pF
V
V
50 nA
pF
IF=10 mA
VR=6.0 V
VR=0
IC=10 µA
IE=10 µA
VCE=10 V
IF=0
VCE=0
% IF=10 mA,
VCE=5 V
0.4 IF=10 mA,
IC=2.0 mA
VACRMS
pF
G
µs IC=2 mA,
RE=100 ,
VCE=10 V
5–1

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