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PDF IL207AT Data sheet ( Hoja de datos )
| Número de pieza | IL207AT | |
| Descripción | PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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FEATURES
• High Current Transfer Ratio, IF=10mA,
VCE=5 V
IL205AT, 40 – 80%
IL206AT, 63 –125%
IL207AT, 100 – 200%
IL208AT, 160 – 320%
• High BVCEO, 70 V
• Isolation Voltage, 2500 VACRMS
• Industry Standard SOIC-8 Surface
Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel (suffix T)
(Conforms to EIA Standard RS481A)
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL205AT/206AT/207AT/208AT are optically
coupled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the
device while maintaining a high degree of electrical
isolation between input and output. The IL205/6/7/8
come in a standard SOIC-8 small outline package
for surface mounting which makes them ideally
suited for high density applications with limited
space. In addition to eliminating through-holes
requirements, this package conforms to standards
for surface mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BVCEO of 70 volts gives
a higher safety margin compared to the industry
standard 30 volts.
Maximum Ratings
Emitter
Peak Reverse Voltage ....................................... 6.0 V
Continuous Forward Current .......................... 60 mA
Power Dissipation at 25°C ............................. 90 mW
Derate Linearly from 25°C ....................... 1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage ................ 70 V
Emitter-Collector Breakdown Voltage .................. 7 V
Collector-Base Breakdown Voltage ................... 70 V
Power Dissipation ........................................ 150 mW
Derate Linearly from 25°C ....................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector) ...................................... 240 mW
Derate Linearly from 25°C ....................... 3.3 mW/°C
Storage Temperature ..................... –55°C to +150°C
Operating Temperature ................. –55°C to +100°C
Soldering Time at 260°C ............................... 10 sec.
Semiconductor Group
IL205AT/206AT/207AT/
208AT
PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
Package Dimensions in Inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
Pin One ID
.192±.005
(4.88±.13)
Anode 1
CL
.154±.005
(3.91±.13)
Cathode 2
NC 3
NC 4
.016 (.41)
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Characteristics (TA=25°C)
Symbol Min. Typ.
Emitter
Forward Voltage
Reverse Current
Capacitance
Detector
VF
IR
CO
1.3
0.1
25
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector-Emitter
BVCEO 70
BVECO 7
10
Dark Current
Collector-Emitter
ICEOdark
5
Capacitance
Package
CCE
10
DC Current Transfer CTRDC
IL205AT
IL206AT
IL207AT
IL208AT
DC Current Transfer
CTRDC
40
63
100
160
IL205AT
IL206AT
IL207AT
IL208AT
Collector-Emitter
Saturation Voltage
Isolation Test Voltage
Equivalent DC
Isolation Voltage
Capacitance,
Input to Output
Resistance,
Input to Output
Switching Time
13 25
22 40
34 60
56 95
VCE sat
VIO 2500
3535
CIO
RIO
tON, tOFF
0.5
100
3.0
Specifications subject to change.
Max. Unit
1.5 V
100 µA
pF
Condition
IF=10 mA
VR=6.0 V
VR=0
V
V
50 nA
pF
%
80
125
200
320
%
IC=100 µA
IE=100 µA
VCE=10 V,
IF=0
VCE=0
IF=10 mA,
VCE=5 V
IF=1 mA,
VCE=5 V
IC=2.0 mA,
0.4 IF=10 mA
VACRMS
VDC
pF
GΩ
µs IC=2 mA,
RE=100 Ω,
VCE=10 V
4–1 10.95
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet IL207AT.PDF ] | |
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