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PDF Q62702-C2529 Data sheet ( Hoja de datos )
| Número de pieza | Q62702-C2529 | |
| Descripción | NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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NPN Silicon AF Transistor Array
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two ( galvanic) internal isolated Transistors
with high matching in one package
BC 846S
4
5
6
3
2
1 VPS05604
Type
Marking Ordering Code Pin Configuration
Package
BC 846S 1Ds
Q62702-C2529 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Total power dissipation, TS = 115 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction ambient 1)
Junction - soldering point
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
Ptot
Tj
Tstg
RthJA
RthJS
Value
65
80
80
6
100
200
250
150
- 65...+150
Unit
V
mA
mW
°C
≤275
≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
SSeemmicioconndduuctcotor rGGrorouupp
11
Ma 1-19928--11919-081
1 page  
BC 846S
Transition frequency fT = f (IC)
VCE = 5V
10 3
MHz
fT 5
EHP00363
Collector-base capacität CCB = f (VCBO)
Emitter-base capacität CEB = f (VEBO)
12 BC 846...850
CCB0 pF
(CEB0 )
10
EHP00361
8
C EB
10 2 6
54
C CB
2
10 1
10 -1
5 10 0
5 10 1
mA 10 2
ΙC
Collector cutoff current ICBO = f (TA)
VCB = 30V
0
10 -1
5 10 0
V 101
VCB0 (VEB0)
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 20
10 4
nA
Ι CB0
10 3
5
10 2
5
10 1
5
10 0
5
10 -1
0
max
50
SSeemmicioconndduuctcotor rGGrorouupp
EHP00381
10 2
mA
ΙC
10 1
5
typ
10 0
5
100 C
25 C
-50 C
EHP00367
100 C 150
TA
10 -1
0
55
0.1 0.2 0.3 0.4 V 0.5
VCEsat
Ma 1-19928--11919-081
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet Q62702-C2529.PDF ] | |
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