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PDF Q62702-C2479 Data sheet ( Hoja de datos )

Número de pieza Q62702-C2479
Descripción Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
Fabricantes Siemens Semiconductor Group 
Logotipo Siemens Semiconductor Group Logotipo



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Active Bias Controller
Characteristics
Supplies stable bias current even at low battery voltage
and extreme ambient temperature variation
Low voltage drop of 0.7V
Application notes
Stabilizing bias current of NPN transistors and FETs from
from less than 0.2mA up to more than 200mA
Ideal supplement for SIEGET and other RF transistors
also usable as current source up to 5mA
BCR 400R
Type
Marking Ordering Code Pin Configuration
Package
BCR 400R W4s
Q62702-C2479 1 GND/ENPN 2 Contr/BNPN 3 VS 4 Rext/CNPN SOT-143R
Maximum Ratings
(ENPN,BNPN,CNPN are electrodes of a stabilized NPN transistor)
Parameter
Symbol
Values
Unit
Supply voltage
Control current
Control voltage
Reverse voltage between all terminals
Total power dissipation, TS = 83°C
Junction temperature
Storage temperature
VS
IContr.
VContr.
VR
Ptot
Tj
Tstg
18
10
16
0.5
330
150
- 65 ... + 150
V
mA
V
mW
°C
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
280
190
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Nov-27-1996

1 page




Q62702-C2479 pdf
BCR 400R
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
400
mW
Ptot
300
250
TS
TA
200
150
100
50
0
0 20 40 60 80 100 120 °C 150
TA,TS
Note that up to TS = 115°C
it is not possible to exceed Ptot
respecting the maximum
ratings of VS and IContr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
Typical application for GaAs FET
with active bias controller
Semiconductor Group
5
Nov-27-1996

5 Page










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